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InGaN/GaN/AlGaN-based laser diodes grown on epitaxially laterally overgrown GaN

Published online by Cambridge University Press:  31 January 2011

Shuji Nakamura
Shuji Nakamura
Affiliation:
Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
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Abstract

Epitaxially laterally overgrown GaN on sapphire was used to reduce the number of threading dislocations originating from the interface of the GaN epilayer with the sapphire substrate. The GaN layer above the SiO2 mask area surrounding the window and corresponding to the lateral overgrowth was nearly free of threading dislocations. A high density of threading dislocations was observed in the vicinity of GaN grown in the window regions. InGaN multiquantum well-structure laser diodes (LDs) grown on pure GaN substrates, which were fabricated by removing the sapphire substrate, were demonstrated. The LDs with an output power of 5 mW exhibited a lifetime of more than 290 h and an estimated lifetime of 10,000 h despite a relatively large threshold current density. The far-field pattern of the LDs with a cleaved mirror facet revealed single-mode emission without any interference effects.

Type
Commentaries and Reviews
Information
Journal of Materials Research , Volume 14 , Issue 7 , July 1999 , pp. 2716 - 2731
Copyright
Copyright © Materials Research Society 1999

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