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Improvement in oxidation resistance of TiB2 by formation of protective SiO2 layer on surface

Published online by Cambridge University Press:  31 January 2011

Young-Hag Koh ,
Hae-Won Kim  and
Hyoun-Ee Kim
Young-Hag Koh
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
Hae-Won Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
Hyoun-Ee Kim*
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
*
a)Address all correspondence to this author. e-mail: kimhe@snu.ac.kr
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Abstract

To improve the oxidation resistance of TiB2 material, dense silica (SiO2) layer was caused to form on the surface. The coating layer was formed on the surface by exposing the specimens next to a bed of SiC powder in a flowing H2 containing 0.1% H2O at 1450 °C. Part of SiO2 “smoke”, generated by a reaction between the SiC powder and H2O in the H2 gas stream, was deposited on the sample surface to form a dense and uniform SiO2 layer. Beneath the SiO2 layer, an interfacial layer composed of Ti2O3 and B2O3was formed. Oxidation resistance of the specimen was improved markedly by the coating layers. The coating layers enhanced the oxidation resistance through the retardation of oxygen transport and also through the consumption of oxygen by a reaction with Ti2O3 to form TiO2.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 1 , January 2001 , pp. 132 - 137
Copyright
Copyright © Materials Research Society 2001

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References

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