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The growth of strained Si1−xGex alloys on 〈001〉 silicon using solid phase epitaxy

Published online by Cambridge University Press:  31 January 2011

D.C. Paine ,
D.J. Howard ,
N.G. Stoffel  and
J.A. Horton
D.C. Paine
Affiliation:
Brown University, Division of Engineering, Providence, Rhode Island 02912
D.J. Howard
Affiliation:
Brown University, Division of Engineering, Providence, Rhode Island 02912
N.G. Stoffel
Affiliation:
Bellcore, Red Bank, New Jersey 07701
J.A. Horton
Affiliation:
Oak Ridge National Laboratory, Metals and Ceramics Division, Oak Ridge, Tennessee 37830
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Abstract

In this paper we report on the growth of pseudomorphically strained Si1−xGex alloys on 〈001〉 Si by solid phase epitaxy. One set of amorphous alloys was formed by high dose ion implantation 74Gc implanted at an energy of 200 kcV to a fluence of 9.6 ⊠ 1020/m2). Our TEM observations show that regrowth of these Si1−xGex(xmax = 0.14) films at ≍590°C results in a high density of planar defects and that these defects are associated with faceting of the amorphous/crystalline interface during annealing. These results were compared with the solid phase regrowth of MBE-grown Si0.7Ge0.3 amorphized with 170 keV 28Si ions which exhibited identical defects and faceting during regrowth. Attendant with this faceting was a decrease in the regrowth velocity, a result of a change from a planar {001} growth morphology to a multi-faceted growth surface containing many <50 nm deep pyramidal impressions. The regrowth rate was quantified, at a particular temperature, by the use of Si homoepitaxy for calibration of in situ TEM experiments. It was shown that the regrowth rate at 594°C in pure Si was 51 nm/min, whereas in the Si0.7Ge0.3 the regrowth rate decreased, as a result of {111} faceting, to 21 nm/min. RBS was used to characterize Ge concentrations and lattice resolution TEM was used to study the development of the faceted interface and associated planar defects during regrowth.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 5 , May 1990 , pp. 1023 - 1031
Copyright
Copyright © Materials Research Society 1990

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References

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