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Experiments and modeling study on growth behavior of Cr-nitrides formed on electroplated hard Cr during ion-nitriding

Published online by Cambridge University Press:  06 January 2012

J. Y. Eom
Affiliation:
Department of Materials Science & Engineering, Korea Advanced Institute of Science & Technology, 373–1, Kusong-dong, Yusong-gu, Taejon 305–701, Korea
V. Shankar Rao
Affiliation:
Department of Materials Science & Engineering, Korea Advanced Institute of Science & Technology, 373–1, Kusong-dong, Yusong-gu, Taejon 305–701, Korea
H. S. Kwon
Affiliation:
Department of Materials Science & Engineering, Korea Advanced Institute of Science & Technology, 373–1, Kusong-dong, Yusong-gu, Taejon 305–701, Korea
K. S. Nam
Affiliation:
Department of Surface Engineering, Korea Institute of Machinery & Materials, 66, Sangnam-dong, Changwon, Kyoungnam 641–010, Korea
S. C. Kwon
Affiliation:
Department of Surface Engineering, Korea Institute of Machinery & Materials, 66, Sangnam-dong, Changwon, Kyoungnam 641–010, Korea
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Abstract

The structure and composition of Cr-nitrides formed on an electroplated hard Cr layer during an ion-nitriding process were analyzed, and its growth kinetics was examined as a function of the ion-nitriding temperature and time to establish a computer simulation model for the prediction of growth behavior of the Cr-nitride layer. The Cr-nitrides formed during the ion-nitriding at 550–770 °C were composed of outer CrN and inner Cr2N layers. A nitrogen diffusion model in the multilayer, based on fixed-grid finite difference method, was applied to simulate the growth kinetics of Cr-nitride layers. By measuring the thickness of Cr-nitride layers as a function of ion-nitriding temperature and time, the activation energy (Q) and nitrogen diffusion constant (Do) were determined for growth of CrN and Cr2N; the result was applied to simulate the growth kinetics of Cr-nitride layers, and reasonable good agreement was obtained with the experimental results.

Type
Articles
Copyright
Copyright © Materials Research Society 2003

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