Hostname: page-component-848d4c4894-v5vhk Total loading time: 0 Render date: 2024-06-28T23:21:29.115Z Has data issue: false hasContentIssue false
  • English
  • Français

Evolution of the Sn/Ni–8.0 at.%V interfacial reaction paths

Published online by Cambridge University Press:  23 September 2011

Sinn-Wen Chen ,
Yu-Ren Lin ,
Hsin-Jay Wu ,
Ru-Bo Chang ,
Chia-Ming Hsu  and
Hong-Ming Lin
Sinn-Wen Chen*
Affiliation:
Department of Chemical Engineering, National Tsing Hua University, Hsin-Chu 300, Taiwan
Yu-Ren Lin
Affiliation:
Department of Chemical Engineering, National Tsing Hua University, Hsin-Chu 300, Taiwan
Hsin-Jay Wu
Affiliation:
Department of Chemical Engineering, National Tsing Hua University, Hsin-Chu 300, Taiwan
Ru-Bo Chang
Affiliation:
Department of Chemical Engineering, National Tsing Hua University, Hsin-Chu 300, Taiwan
Chia-Ming Hsu
Affiliation:
Department of Chemical Engineering, National Tsing Hua University, Hsin-Chu 300, Taiwan
Hong-Ming Lin
Affiliation:
Department of Materials Engineering, Tatung University, Taipei 104, Taiwan
*
a)Address all correspondence to this author. e-mail: swchen@mx.nthu.edu.tw
Get access

Abstract

Sn/Ni–8.0 at.%V (Ni–7.0 wt%V) couples are prepared and the interfacial reactions at 210 and 250 °C are examined. In the early stage of reaction at 250 °C, a T phase is formed as a result of fast diffusion of Sn into the Ni–8.0 at.%V substrate. With a longer reaction, the outer region of the T phase transforms to a Ni-depletion layer, which has not been observed previously. Both the T phase and the Ni-depletion layer are analyzed using transmission electronic microscopy. This newly found Ni-depletion layer is composed of Sn and nanosize “VSn2(V2Sn3)” particulates. The solid/solid reaction paths in the Sn/Ni–8.0 at.%V couples evolve from Sn/T/Ni–V, Sn/Ni3Sn4/T/Ni–V to Sn/Ni3Sn4/VSn2(V2Sn3). During the liquid/solid reactions, the paths are liquid/T/Ni–V, liquid/liquid + Ni3Sn4/T/Ni–V, liquid/liquid + Ni3Sn4/liquid + VSn2(V2Sn3)/T/Ni–V, and liquid/liquid + Ni3Sn4/liquid + VSn2(V2Sn3).

Keywords

AmorphousMicrostructureSoldering
Type
Articles
Information
Journal of Materials Research , Volume 26 , Issue 22 , 28 November 2011 , pp. 2838 - 2843
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Tu, K.N. and Zeng, K.: Tin-lead (SnPb) solder reaction in flip chip technology. Mater. Sci. Eng. R34, 1 (2001).CrossRefGoogle Scholar
2.Chen, C-C., Chen, S-W., and Kao, C-Y.: Interfacial reactions in the Sn-(Ag)/(Ni, V) couples and phase equilibria of the Sn-Ni-V system at the Sn-rich corner. J. Electron. Mater. 35, 922 (2006).CrossRefGoogle Scholar
3.Chen, C-C. and Chen, S-W.: The Sn/Ni–7 wt%V interfacial reactions. J. Electron. Mater. 35, 1701 (2006).CrossRefGoogle Scholar
4.Chen, S-W., Chen, C-C., and Chang, C-H.: Interfacial reactions in Sn/Ni-7wt%V couple. Scr. Mater. 56, 453 (2007).CrossRefGoogle Scholar
5.Chen, C-C., Chen, S-W., and Chang, C-H.: Solid/solid interfacial reactions between Sn-0.7wt%Cu and Ni-7wt%V. J. Mater. Res. 23, 1895 (2008).CrossRefGoogle Scholar
6.Chen, C-C., Chen, S-W., and Chang, C-H.: Characterizations of the ternary phase formed at the Sn/Ni-V joint. J. Mater. Res. 23, 2743 (2008).CrossRefGoogle Scholar
7.Liu, C.Y., Tu, K.N., Sheng, T.T., Tung, C.H., Frear, D.R., and Elenius, P.: Electron microscopy study of interfacial reaction between eutectic SnPb and Cu/Ni(V)/Al thin film metallization. J. Appl. Phys. 87, 750 (2000).CrossRefGoogle Scholar
8.Chun, T.T., Hang, T.C., and Chong, C.T.: Investigation of microstructure change in Ni-based UBM systems in lead free solder, in 28th International Symposium for Testing and Failure Analysis, Phoenix, AZ, November 3–7, 2002, p. 127.Google Scholar
9.Zhang, F., Li, M., Chum, C.C., and Shao, Z.C.: Effects of substrate metallization on solder/under-bump metallization interfacial reactions in flip-chip packages during multiple reflow cycles. J. Electron. Mater. 32, 123 (2003).CrossRefGoogle Scholar
10.Jang, G-Y. and Duh, J-G.: Elemental redistribution and interfacial reaction mechanism for the flip chip Sn-3.0Ag-(0.5 or 1.5)Cu solder bump with Al/Ni(V)/Cu under-bump metallization during aging. J. Electron. Mater. 35, 2061 (2006).CrossRefGoogle Scholar
11.Osenbach, J., Amin, A., Bachman, M., Baiocchi, F., Bitting, D., Crouthamel, D., Delucca, J., Gerlach, D., Goodell, J., Peridier, C., Stahley, M., and Weachock, R.: Stability of flip-chip interconnects assembled with Al/Ni(V)/Cu-UBM and eutectic Pb-Sn solder during exposure to high-temperature storage. J. Electron. Mater. 38, 303 (2008).CrossRefGoogle Scholar
12.Tsai, M-Y., Lin, Y-L., and Kao, C.R.: Transmission electron microscopy characterization of the porous structure induced by high current density in the flip-chip solder joints, in Proceedings of the Chinese Materials Research Society 2009 Annual Meeting, edited by MRS-T (Hsinchu, Taiwan, 2009), No. 03–0094.Google Scholar
13.Flewitt, P.E.J. and Wild, R.K.: Physical Methods for Materials Characterization (Institute of Physics Publishing, Bristol and Philadelphia, 1994), p. 283.Google Scholar
14.Chen, C-C., Gierlotka, W., and Chen, S-W.: Phase equilibria of the Sn-V system and interfacial reactions in Sn/V couples. J. Electron. Mater. 37, 1727 (2008).CrossRefGoogle Scholar
Supplementary material: File

Chen Supplementary Table

Table 1: The EPMA measurements along the two different layers in the Sn/Ni-8.0at%V couples reacted at 250oC for 24 hours.

Download Chen Supplementary Table(File)
File 28.7 KB