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Evidence for self-organization processes in PbTe-Bi2Te3 semiconductor solid solutions

Published online by Cambridge University Press:  29 June 2011

Elena Rogacheva ,
Olga Vodorez ,
Vladimir Pinegin  and
Olga Nashchekina
Elena Rogacheva*
Affiliation:
Theoretical & Experimental Physics Department, National Technical University “Kharkov Polytechnic Institute,” 61002 Kharkov, Ukraine
Olga Vodorez
Affiliation:
Theoretical & Experimental Physics Department, National Technical University “Kharkov Polytechnic Institute,” 61002 Kharkov, Ukraine
Vladimir Pinegin
Affiliation:
Theoretical & Experimental Physics Department, National Technical University “Kharkov Polytechnic Institute,” 61002 Kharkov, Ukraine
Olga Nashchekina
Affiliation:
Theoretical & Experimental Physics Department, National Technical University “Kharkov Polytechnic Institute,” 61002 Kharkov, Ukraine
*
a)Address all correspondence to this author. e-mail: rogacheva@kpi.kharkov.ua
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Abstract

The dependences of unit cell parameter, x-ray diffraction line width B, and microhardness H on the composition of PbTe-Bi2Te3 (0–10 mol% Bi2Te3) semiconductor alloys, subjected to different types of heat treatment, were obtained. In the concentration ranges ∼0.5–1.5 and 3–4 mol% Bi2Te3 within the homogeneity region of PbTe (0–6 mol% Bi2Te3), anomalous constancy or decrease in B and H was observed. A long room temperature aging leads to a more distinct manifestation of these effects. It is suggested that the observed peculiarities in the concentration dependences of the properties are connected with percolation effects and self-organization processes in the solid solution.

Keywords

Chemical substitutionX-ray diffractionInteratomic arrangements
Type
Articles
Information
Journal of Materials Research , Volume 26 , Issue 13 , 14 July 2011 , pp. 1627 - 1633
Copyright
Copyright © Materials Research Society 2011

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References

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