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Electrical transport properties of size-tuned ZnO nanorods

Published online by Cambridge University Press:  01 January 2006

Young Su Yun ,
Jae Young Park ,
Hwangyou Oh ,
Ju-Jin Kim  and
Sang Sub Kim
Young Su Yun
Affiliation:
Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757, Korea
Jae Young Park
Affiliation:
Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757, Korea
Hwangyou Oh
Affiliation:
Department of Physics, Chonbuk National University, Chonju 561-756, Korea
Ju-Jin Kim
Affiliation:
Department of Physics, Chonbuk National University, Chonju 561-756, Korea
Sang Sub Kim*
Affiliation:
Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757, Korea
*
a)Address all correspondence to this author. e-mail: sangsub@chonnam.ac.kr
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Abstract

Size-tuned ZnO nanorod arrays (NRAs), aligned well vertically and laterally, were synthesized by catalyst-free, metalorganic chemical vapor deposition on GaN-buffered Al2O3 (0001) substrates by adjusting the O/Zn precursor ratio in the reactor. Their electrical transport properties were investigated using field effect transistors based on individual ZnO nanorods. We find that the carrier concentrations and mobilities in the nanorods are not very sensitive to the change of the precursor ratio. This suggests that altering the precursor ratio is a way of fabricating size-tuned ZnO NRAs with quite consistent electrical properties.

Keywords

Electrical propertiesMetalorganic depositionNanoscale
Type
Articles
Information
Journal of Materials Research , Volume 21 , Issue 1 , January 2006 , pp. 132 - 136
Copyright
Copyright © Materials Research Society 2006

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