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Effects of HfO2 buffer layer thickness on the properties of Pt/SrBi2Ta2O9/HfO2/Si structure

Published online by Cambridge University Press:  31 January 2011

Ching-Chich Leu ,
Chen-Han Lin ,
Chao-Hsin Chien  and
Ming-Jui Yang
Ching-Chich Leu*
Affiliation:
Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, Republic of China
Chen-Han Lin
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30043, Taiwan, Republic of China
Chao-Hsin Chien
Affiliation:
Department of Electronics Engineering, National Chiao Tung University, Hsinchu 30050, Taiwan, Republic of China
Ming-Jui Yang
Affiliation:
National Nano Device Laboratories, Hsinchu 30043, Taiwan, Republic of China
*
a)Address all correspondence to this author. e-mail: ccleu@nuk.edu.tw
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Abstract

We investigated structural and characteristic changes in thin HfO2 films (<10 nm) by varying their thicknesses and also examined their influence on the properties of Pt/SrBi2Ta2O9/HfO2/Si metal/ferroelectric/insulator/semiconductor (MFIS) structures. HfO2 films with different thicknesses were found to exhibit rather distinct characteristics and to profoundly affect the properties of the fabricated MFIS capacitor. We found that, when employing 3.2-nm-thick HfO2 as the buffer layer, the MFIS capacitor showed good memory performance at low operation voltage. However, this study demonstrated that some of the HfO2 limited its application in MFIS memory, even though it is the most promising alternative gate dielectric material.

Keywords

DielectricFerroelectricTransmission electron microscopy (TEM)
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 7 , July 2008 , pp. 2023 - 2032
Copyright
Copyright © Materials Research Society 2008

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References

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