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Effect of material properties on integration damage in organosilicate glass films

Published online by Cambridge University Press:  31 January 2011

E. Todd Ryan ,
Jeremy Martin ,
Kurt Junker ,
Jeff Wetzel ,
David W. Gidley  and
Jianing Sun
E. Todd Ryan*
Affiliation:
Advanced Micro Devices, AMD/Motorola Alliance, 3501 Ed Bluestein Boulevard, Austin, Texas 78721
Jeremy Martin
Affiliation:
Advanced Micro Devices, AMD/Motorola Alliance, 3501 Ed Bluestein Boulevard, Austin, Texas 78721
Kurt Junker
Affiliation:
Motorola, APRDL, 3501 Ed Bluestein Boulevard, Austin, Texas 78721
Jeff Wetzel
Affiliation:
International SEMATECH, 2706 Montopolis Drive, Austin, Texas 78757
David W. Gidley
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, Michigan 48109
Jianing Sun
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, Michigan 48109
*
a)Address all correspondence to this author. e-mail: r6758c@email.sps.mot.com
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Extract

Most organosilicate glass (OSG), low dielectric constant (low-κ) films contain Si–R groups, where R is an organic moiety such as −CH3. The organic component is susceptible to the chemically reactive plasmas used to deposit cap layers, etch patterns, and ash photoresist. This study compares a spin-on, mesoporous OSG film with a completely connected pore structure to both its nonmesoporous counterpart and to another low-density OSG film deposited by plasma-enhanced chemical vapor deposition. The results show that the film with connected pores was much more susceptible to integration damage than were the nonmesoporous OSG films.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 16 , Issue 12 , December 2001 , pp. 3335 - 3338
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1.Lee, W.W. and Ho, P. S., MRS Bulletin 22 (10), 19 (1997).CrossRefGoogle Scholar
2.Morgen, M., Ryan, E. T., Zhao, J-H., Hu, C., Cho, T., and Ho, P. S., Ann. Rev. Mater. Sci. 30, 645 (2000).CrossRefGoogle Scholar
3.Ryan, E. T., Ho, H-M., Wu, W-L., Ho, P. S., Gidley, D. W., and Drage, J., IITC Proc. 187 (1999).Google Scholar
4.Ryan, E. T., Lin, S., Nelsen, D., Wetzel, J., Gidley, D., and Drage, J., Adv. Metal. Conf. Proc. (2000, in press).Google Scholar
5.Kondoh, E., Baklanov, M. R., Bender, H., and Maex, K., Electrochem. Solid-State Lett. 1, 224 (1998).CrossRefGoogle Scholar
6.Iler, R. K., The Chemistry of Silica(Wiley, New York, 1979).Google Scholar
7.Ryan, E. T., Lin, S., and Wetzel, J. (unpublished).Google Scholar
8.Chang, T. C., Liu, P. T., Mor, Y. S., Sze, S. M., Yang, Y. L., Feng, M. S., Pan, F. M., Dai, B. T., and Chang, C. Y., J. Electrochem. Soc. 146, 3802 (1999).CrossRefGoogle Scholar
9.Liu, P. T., Chang, T. C., Mor, Y. S., and Sze, S. M., Jpn. J. Appl. Phys. 38, 3482 (1999).CrossRefGoogle Scholar
10.Liu, P. T., Chang, T. C., Yang, Y. L., Cheng, Y. F., and Sze, S. M., IEEE Trans. Elect. Dev. 47, 1733 (2000).Google Scholar
11.Gidley, D. W., Frieze, W. E., Dull, T. L., Yee, A. F., Ho, H. M., and Ryan, E. T., Phys. Rev. B 60, R5157 (1999).CrossRefGoogle Scholar
12.Data provided by the material supplier.Google Scholar
13.Unpublished SEMATECH data.Google Scholar