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Degradation of organic field-effect transistors made of pentacene

Published online by Cambridge University Press:  03 March 2011

Ch. Pannemann ,
T. Diekmann  and
U. Hilleringmann
Ch. Pannemann*
Affiliation:
University of Paderborn, Department of Electrical Engineering EIM-E, Warburger Str. 100, D-33098 Paderborn, Germany
T. Diekmann
Affiliation:
University of Paderborn, Department of Electrical Engineering EIM-E, Warburger Str. 100, D-33098 Paderborn, Germany
U. Hilleringmann
Affiliation:
University of Paderborn, Department of Electrical Engineering EIM-E, Warburger Str. 100, D-33098 Paderborn, Germany
*
a) Address all correspondence to this author.e-mail: pannemann@sensorik.uni-paderborn.de
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Abstract

This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert p-type silicon wafers as the substrate and SiO2 as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found to have unambiguously degraded over 3 orders of magnitude in maximum on-current and charge carrier field-effect mobility, but they still operated after a period of 9 months in ambient air conditions. A thermal treatment was carried out in vacuum conditions and revealed a degradation of the charge carrier field-effect mobility, maximum on-current, and threshold voltage.

Keywords

AgingOrganicSemiconductor
Type
Articles—Organic Electronics Special Section
Information
Journal of Materials Research , Volume 19 , Issue 7 , July 2004 , pp. 1999 - 2002
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1.Gundlach, D.J., Kuo, C.C., Nelson, S.F., and Jackson, T.N.: in 57th Device Research Conference Digest, pp. 164–165, (1999).Google Scholar
2.Jackson, T.N., Lin, Y.Y., Gundlach, D.J., and Klauk, H.: IEEE J. Selected Topics Quantum Electron 4, 100 (1998).CrossRefGoogle Scholar
3.Zilker, S.J., Detcheverry, C., Cantatore, E., and de Leeuw, D.M.: Appl. Phys. Lett. 79, 1124 (2001).CrossRefGoogle Scholar
4.Gelinck, G.H., Geuns, T.C.T., and de Leeuw, D.M.: Appl. Phys. Lett. 77, 1487 (2000).CrossRefGoogle Scholar
5.Lin, Y-Y., Gundlach, D.J., Nelson, S.F., and Jackson, T.N.: IEEE Electron Device Lett. 18, 606 (1997).CrossRefGoogle Scholar
6. J.H. Schön, Appl. Phys. Lett. 79, 4163 (2001).CrossRefGoogle Scholar
7.Pannemann, C., Diekmann, T., and Hilleringmann, U.: Microelectron. Eng. 1, 852 (2003).Google Scholar
8.Knipp, D., Street, R.A., Völkel, A. and Ho, J.: J. Appl. Phys. 93, 347 (2003).CrossRefGoogle Scholar
9.Northrup, J.E. and Chabinyc, M.L.: Phys. Rev. B 68, 041202 (2003).CrossRefGoogle Scholar
10.Brown, A.R., Jarret, C.P., de Leeuw, D.M. and Matters, M.: Synth. Met. 88, 37 (1997).CrossRefGoogle Scholar