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Crystallography and structural evolution of LiNbO3 and LiNb1−xTaxO3 films on sapphire prepared by high-rate thermal plasma spray chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

D. V. Shtansky ,
S. A. Kulinich ,
K. Terashima ,
T. Yoshida  and
Y. Ikuhara
D. V. Shtansky
Affiliation:
Department of Materials Engineering, Graduate School and Faculty of Engineering, The University of Tokyo, 7–3-1 Hongo, Bunkyo-ku, Tokyo 113–8656, Japan
S. A. Kulinich
Affiliation:
Department of Materials Engineering, Graduate School and Faculty of Engineering, The University of Tokyo, 7–3-1 Hongo, Bunkyo-ku, Tokyo 113–8656, Japan
K. Terashima
Affiliation:
Department of Materials Engineering, Graduate School and Faculty of Engineering, The University of Tokyo, 7–3-1 Hongo, Bunkyo-ku, Tokyo 113–8656, Japan
T. Yoshida
Affiliation:
Department of Materials Engineering, Graduate School and Faculty of Engineering, The University of Tokyo, 7–3-1 Hongo, Bunkyo-ku, Tokyo 113–8656, Japan
Y. Ikuhara
Affiliation:
Engineering Research Institute, School of Engineering, The University of Tokyo, 2–11–16 Yayoi, Bunkyo-ku, Tokyo 113–8656, Japan
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Abstract

The structure and the crystallography of lithium niobate and lithium niobate–tantalate thin films (0.2–1.0 μm in thickness) with the tantalum composition range of 0 ≤ x ≤ 0.5 grown on (0001) sapphire substrate by thermal plasma spray chemical vapor deposition have been studied by means of cross-sectional high-resolution transmission electron microscopy and x-ray diffraction. The tantalum composition in the films shows a minor effect on the rocking curve full width at half maximum values. The narrowest rocking curve width was obtained for the LiNb0.5Ta0.5O3 film to be as low as 0.25° θ. The films are under compressive strain along the c direction; c- and a-axis lattice parameters are correspondingly smaller and higher than those of the bulk single crystal. Under optimized growth conditions, the LiNbO3 and LiNb1−xTaxO3 films are 97% c-axis oriented. The film out-of-plane orientation changes from the [0001] to the [0112] direction by either decreasing the growth rate or increasing the substrate temperature. Particular attention has been paid to the orientation of individual grains in the partly c-axis-oriented films. The results demonstrate that their orientations are not random and specific orientation relationships are preferred for the film nucleation. The surface of as-received sapphire substrate reveals polishing defects with the well-defined surface ledges of 1–2 nm in height with smooth terraces of 25 nm in width. In the case of columnar growth, the terrace width becomes a limiting factor controlling the lateral crystallite size in the film. Finally, the film growth mechanism is discussed.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 8 , August 2001 , pp. 2271 - 2279
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1Betts, R.A. and Pitt, C.W., Electron. Lett. 21, 960 (1985).CrossRefGoogle Scholar
2Sakashita, Y. and Segawa, H., J. Appl. Phys. 77, 5995 (1995).CrossRefGoogle Scholar
3Lee, S.Y. and Feigelson, R.S., J. Mater. Res. 14, 2662 (1999).CrossRefGoogle Scholar
4Lee, S.Y. and Feigelson, R.S., J. Cryst. Growth 186, 594 (1998).CrossRefGoogle Scholar
5Feigelson, R.S., J. Cryst. Growth 166, 1 (1996).CrossRefGoogle Scholar
6Lu, Z., Hiskes, R., DiCarolis, S.A., Route, R.K., Feigelson, R.S., Leplingard, F., and Fouquet, J.E., J. Mater. Res. 9, 2258 (1994).CrossRefGoogle Scholar
7Wernberg, A.A., Gysling, H.J., Filo, A.J., and Blanton, T.N., Appl. Phys. Lett. 62, 946 (1993).CrossRefGoogle Scholar
8Matsunaga, H., Ohno, H., Okamoto, Y., and Nakajima, Y., J. Cryst. Growth 99, 630 (1990).CrossRefGoogle Scholar
9Kaigawa, K., Kawaguchi, T., Imaeda, M., Sakai, H., and Fukuda, T., J. Cryst. Growth 191, 119 (1998).CrossRefGoogle Scholar
10Kawaguchi, T., Kitayama, H., Imaeda, M., Ito, S., Kaigawa, K., Taniuchi, T., and Fukuda, T., J. Cryst. Growth 169, 94 (1996).CrossRefGoogle Scholar
11Derderian, G.J., Barrie, J.D., Aitchison, K.A., Adams, P.M., and Mecartney, M.L., J. Am. Ceram. Soc. 77, 820 (1994).CrossRefGoogle Scholar
12Ono, S., Takeo, T., and Hirano, S., J. Am. Ceram. Soc. 79, 1343 (1996).CrossRefGoogle Scholar
13Bouquet, V., Longo, E., Leite, E.R., and Varela, J.A., J. Mater. Res. 14, 3155 (1999).CrossRefGoogle Scholar
14Shibata, Y., Kaya, K., Akashi, K., Kanai, M., Kawai, T., and Kawai, S., Appl. Phys. Lett. 61, 1000 (1992).CrossRefGoogle Scholar
15Hu, W.S., Liu, Z.G., and Feng, D., J. Appl. Phys. 80, 7089 (1996).CrossRefGoogle Scholar
16Veignant, F., Gandais, M., Aubert, P., and Garry, G., Thin Solid Films 336, 163 (1998).CrossRefGoogle Scholar
17Yilmaz, S., Gerhard-Multhaupt, R., Bonner, W.A., Hwang, D.M., Inam, A., Martinez, J.A., Ravi, T.S., Sands, T., Wilkens, B.J., Wu, X.D., and Venkatesan, T., J. Mater. Res. 9, 1272 (1994).CrossRefGoogle Scholar
18Agostinelli, J.A., Braunstein, G.H., and Blanton, T.N., Appl. Phys. Lett. 63, 123 (1993).CrossRefGoogle Scholar
19Park, S-K., Baek, M-S., Bae, S-C., Kwun, S-Y., Kim, K-T., and Kim, K-W., Solid State Commun. 111, 347 (1999).CrossRefGoogle Scholar
20Blanton, T.N. and Chatterjee, D.K., Thin Solid Films 256, 59 (1995).CrossRefGoogle Scholar
21Fujimura, N., Kakinoki, M., Tsuboi, H., and Ito, T., J. Appl. Phys. 75, 2169 (1994).CrossRefGoogle Scholar
22Yamada, A., Tamada, H., and Saito, M., Appl. Phys. Lett. 61, 2848 (1992).CrossRefGoogle Scholar
23Yamaguchi, N., Hattori, T., Terashima, K., and Yoshida, T., Thin Solid Films 316, 185 (1998).CrossRefGoogle Scholar
24Wu, Z.C., Hu, W.S., Liu, J.M., Wang, M., and Liu, Z.G., Mater. Lett. 34, 332 (1998).CrossRefGoogle Scholar
25Takamura, Y., Hayasaki, K., Terashima, K., and Yoshida, T., Plasma Chem. Plasma Proc. 16, 141S (1996).CrossRefGoogle Scholar
26Berg, S. and Katardjiev, I.V., J. Vac. Sci. Technol., A 17, 1916 (1999).CrossRefGoogle Scholar
27Cheng, S.D., Kam, C.H., Zhou, Y., Han, X.Q., Que, W.X., Lam, Y.L., Chan, Y.C., Oh, J.T., and Gan, W.S., Thin Solid Films 365, 77 (2000).CrossRefGoogle Scholar
28Veignant, F., Gandais, M., Aubert, P., and Garry, G., J. Cryst. Growth 196, 141 (1999).CrossRefGoogle Scholar
29Yoshimoto, M., Maeda, T., Ohnishi, T., Koinuma, H., Ishiyama, O., Shinohara, M., Kubo, M., Miura, R., and Miyamoto, A., Appl. Phys. Lett. 67, 2615 (1995).CrossRefGoogle Scholar
30Thornton, J.A., J. Vac. Sci. Technol. 11, 666 (1974).CrossRefGoogle Scholar
31Thornton, J.A., J. Vac. Sci. Technol. 12, 830 (1975).CrossRefGoogle Scholar
32Smith, D.L., Thin-film Deposition Principles and Practice (McGraw-Hill, New York, 1995), pp. 327–380.Google Scholar
33Venables, J.A., Spiller, G.D.T., and Hanbucken, M., Rep. Prog. Phys. 47, 399 (1984).CrossRefGoogle Scholar
34Robins, J.L., Appl. Surf. Sci. 33/34, 379 (1988).CrossRefGoogle Scholar
35Lee, G.H., Yoshimoto, M. and Koinuma, H., Appl. Surf. Sci. 127–129, 393 (1998).CrossRefGoogle Scholar