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Characterization of PbTiO3 thin films deposited on Pt/Ti/SiO2/Si substrates by ECR PECVD

Published online by Cambridge University Press:  03 March 2011

Sung-Woong Chung ,
Jung-Shik Shin ,
Jae-Whan Kim ,
Kwangsoo No ,
Sung-Soon Chun  and
Won-Jong Lee
Sung-Woong Chung
Affiliation:
Department of Electronic Materials Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305 701, South Korea
Jung-Shik Shin
Affiliation:
Department of Electronic Materials Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305 701, South Korea
Jae-Whan Kim
Affiliation:
Department of Electronic Materials Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305 701, South Korea
Kwangsoo No
Affiliation:
Department of Ceramic Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305-701, South Korea
Sung-Soon Chun
Affiliation:
Department of Electronic Materials Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305-701, South Korea
Won-Jong Lee
Affiliation:
Department of Electronic Materials Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305-701, South Korea
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Abstract

The electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR PECVD) method is used to prepare ferroelectric PbTiO3 films. Single-phase perovskite PbTiO3 films with smooth surfaces and fine grain size were successfully fabricated on Pt/Ti/SiO2/Si substrates at low temperatures of 400–500 °C using metal-organic (MO) sources. The chemical compositions, structural phases, surface morphologies, and depth profiles of the PbTiO3 thin films were investigated using EDS, XRD, SEM, RBS, and AES. Variations of those properties with process temperature and gas supply ratio are discussed. When the process temperature was above 450 °C, the stoichiometric perovskite PbTiO3 films could be obtained even though the MO source supply ratio was varied in a wide range if the oxygen supply was sufficient.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 2 , February 1995 , pp. 447 - 452
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1Polla, D. L., Proc. 8th IEEE Int. Symp. Appl. Ferro., 127 (1992).Google Scholar
2Akinaga, M., Fukuda, H., Ohkubo, H., Fukami, T., and Aomine, T., Jpn. J. Appl. Phys. 31, 2978 (1992).CrossRefGoogle Scholar
3Funakubo, H., Hioki, T., Otsu, M., Shinozaki, K., and Mizutani, N., Jpn. J. Appl. Phys. 32, 4175 (1993).Google Scholar
4Maeda, M., Ishida, H., Soe, K. K. K., and Suzuki, I., Jpn. J. Appl. Phys. 32, 4136 (1993).Google Scholar
5Dana, S. S., Etzod, K. F., and Clabes, J., J. Appl. Phys. 69, 4398 (1991).CrossRefGoogle Scholar
6Ye, C-P., Tamagawa, T., Lin, Y-Y., and Polla, D. L., in Ferroelectric Thin Films II, edited by Kingon, A. I., Myers, E. R., and Turtle, B. (Mater. Res. Soc. Symp. Proc. 243, Pittsburgh, PA, 1992), p. 61.Google Scholar
7Cole, B. E., Horning, R. D., and Kruse, P. W., in Ferroelectric Thin Films II, edited by Kingon, A. I., Myers, E. R., and Turtle, B. (Mater. Res. Soc. Symp. Proc. 243, Pittsburgh, PA, 1992), p. 185.Google Scholar
8Kushda, K. and Takeuchi, H., Ferroelectrics (Gordon and Breach Science Publishers, New York, 1990), Vol. 108, p. 3.Google Scholar
9Nakai, T., Tabuchi, T. T., Sawado, Y., Kobayashi, I., and Sugimori, Y., Jpn. J. Appl. Phys. 31, 2992 (1992).Google Scholar
10Measured experimentally in this laboratory.Google Scholar
11Okada, M. and Tominaga, K., J. Appl. Phys. 71, 1955 (1992).CrossRefGoogle Scholar
12Hayashi, S., Iijima, K., and Hirao, T., in Ferroelectric Thin Films II, edited by Kingon, A. I., Myers, E. R., and Turtle, B. (Mater. Res. Soc. Symp. Proc. 243, Pittsburgh, PA, 1992), p. 155.Google Scholar
13Ueno, S. and Ishiwara, H., Jpn. J. Appl. Phys. 31, 2982 (1992).CrossRefGoogle Scholar
14Fujisawa, A., Furihata, M., Minemura, I., Onuma, Y., and Fukami, T., Jpn. J. Appl. Phys. 32, 4048 (1993).CrossRefGoogle Scholar
15Bruchhaus, R., Pitzer, D., Eibl, O., Scheithauer, U., and Hoesler, W., in Ferroelectric Thin Films II, edited by Kingon, A. I., Myers, E. R., and Tuttle, B. (Mater. Res. Soc. Symp. Proc. 243, Pittsburgh, PA, 1992), p. 123.Google Scholar