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Brittle to Ductile Transition Dependence upon the Transition Pressure Value of Semiconductors in Micromachining

Published online by Cambridge University Press:  31 January 2011

Renato G. Jasinevicius ,
Paulo S. Pizani  and
Jaime G. Duduch
Renato G. Jasinevicius
Affiliation:
Departamento de Engenharia Mecanica, Escola de Engenharia de São Carlos, Universidade de São Paulo, CP 359, CEP 13560-970, São Carlos, São Paulo, Brazil
Paulo S. Pizani
Affiliation:
Departamento de Fisica, Universidade Federal de São Carlos, CP 676, 13565-905, São Carlos, São Paulo, Brazil
Jaime G. Duduch
Affiliation:
Departamento de Engenharia Mecanica, Escola de Engenharia de São Carlos, Universidade de São Paulo, CP 359, CEP 13560-970, São Carlos, São Paulo, Brazil
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Abstract

Single-point diamond turning tests were carried out in two different [001]-oriented semiconductors, InSb and Si single crystals. The analysis of the conditions in which the machining is in ductile or brittle mode indicates that the plasticity presented by semiconductor crystals during micromachining can be correlated to the value of the transition pressure. It is shown that the ductility presented by different semiconductor single crystals is inversely related to the transition pressure value of the material.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 8 , August 2000 , pp. 1688 - 1692
Copyright
Copyright © Materials Research Society 2000

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