Hostname: page-component-848d4c4894-pftt2 Total loading time: 0 Render date: 2024-05-13T14:34:19.027Z Has data issue: false hasContentIssue false
  • English
  • Français

Annealing behaviors of structural, interfacial and optical properties of HfO2 thin films prepared by plasma assisted reactive pulsed laser deposition

Published online by Cambridge University Press:  31 January 2011

Zhifeng Ying ,
Wentao Tang ,
Zhigao Hu ,
Wenwu Li ,
Jian Sun ,
Ning Xu  and
Jiada Wu
Wentao Tang
Affiliation:
Key Laboratory for Advanced Photonic Materials and Devices, Ministry of Education, Department of Optical Science and Engineering, Fudan University, Shanghai 200433, People's Republic of China
Wenwu Li
Affiliation:
Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, People's Republic of China
Jiada Wu*
Affiliation:
Key Laboratory for Advanced Photonic Materials and Devices, Ministry of Education, Department of Optical Science and Engineering, Fudan University, Shanghai 200433, People's Republic of China
*
a)Address all correspondence to this author. e-mail: jdwu@fudan.edu.cn
Get access

Abstract

The structure and properties of HfO2 films deposited by plasma assisted reactive pulsed laser deposition and annealed in N2 were studied upon thermal annealing as well as the evaluation of thermal stability by Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and optical transmission measurements. The as-deposited HfO2 films appear predominantly monoclinic with an amorphous matrix which becomes crystallized after high-temperature annealing. No interfacial SiOx is observed for the as-deposited films on Si. The deposited HfO2 films exhibit good thermal stability and show excellent transparency in a wide spectral range with optical band gap energies of 5.65–5.73 eV depending on annealing temperature. An improvement in the optical properties by high-temperature annealing is also observed.

Keywords

AnnealingOxideOptical properties
Type
Articles
Information
Journal of Materials Research , Volume 25 , Issue 4 , April 2010 , pp. 680 - 686
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Kingon, A.I., Maria, J-P., Streiffer, S.K.Alternative dielectrics to silicon dioxide for memory and logic devices. Nature 406, 1032 (2000)CrossRefGoogle ScholarPubMed
2.Wilk, G.D., Wallace, R.M., Anthony, J.M.High-k gate dielectrics: Current status and materials properties considerations. J. Appl. Phys. 89, 5243 (2001)CrossRefGoogle Scholar
3.Gusev, E.P., Carier, E., Buchanan, D.A., Gribelyuk, M., Copel, M., Okorn-Schmidt, H., E'mic, C.D.Ultrathin high-K metal oxides on silicon: Processing, characterization and integration issues. Microelectron. Eng. 59, 341 (2001)CrossRefGoogle Scholar
4.Robertson, J.Band offsets of wide-band-gap oxides and implications for future electronic devices. J. Vac. Sci. Technol., B 18, 1785 (2000)CrossRefGoogle Scholar
5.Lin, Y-S., Puthenkovilakam, R., Chang, J.P.Dielectric property and thermal stability of HfO2 on silicon. Appl. Phys. Lett. 81, 2041 (2002)CrossRefGoogle Scholar
6.Kozlowski, M.R.Damage-resistant laser coatingsThin Films for Optical Systems edited by F. Flory (Marcel Dekker, New York 1996)521Google Scholar
7.Alvisi, M., Di Giulio, M., Marrone, S.G., Perrone, M.R., Protopapa, M.L., Valentini, A., Vasanelli, L.HfO2 films with high laser damage threshold. Thin Solid Films 358, 250 (2000)CrossRefGoogle Scholar
8.Alvisi, M., De Tomasi, F., Perrone, M.R., Protopapa, M.L., Rizzo, A., Sarto, F., Scaglione, S.Laser damage dependence on structural and optical properties of ion-assisted HfO2 thin films. Thin Solid Films 396, 44 (2001)CrossRefGoogle Scholar
9.Kruschwitz, J.D.T., Pawlewicz, W.T.Optical and durability properties of infrared transmitting thin films. Appl. Opt. 36, 2157 (1997)CrossRefGoogle Scholar
10.Katamreddy, R., Inman, R., Jursich, G., Soulet, A., Takoudis, C.Atomic layer deposition of HfO2, Al2O3, and HfAlOx using O3 and metal (diethylamino) precursors. J. Mater. Res. 22, 3455 (2007)CrossRefGoogle Scholar
11.Modreanu, M., Sancho-Parramon, J., Durand, O., Servet, B., Stchakovsky, M., Eypert, C., Naudin, C., Knowles, A., Bridou, F., Ravet, M-F.Investigation of thermal annealing effects on microstructural and optical properties of HfO2 thin films. Appl. Surf. Sci. 253, 328 (2006)CrossRefGoogle Scholar
12.Flüchter, C.R., Weier, D., Schürmann, M., Berges, U., Döring, S., Westphal, C.Evolution of chemical states within the HfO2/Si(100) interface upon annealing, prepared by direct electron beam evaporation. Surf. Sci. 602, 2623 (2008)CrossRefGoogle Scholar
13.Neumayer, D.A., Cartier, E.Materials characterization of ZrO2–SiO2 and HfO2–SiO2 binary oxides deposited by chemical solution deposition. J. Appl. Phys. 90, 1801 (2001)CrossRefGoogle Scholar
14.Lao, S.X., Martin, R.M., Chang, J.P.Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films. J. Vac. Sci. Technol., A 23, 488 (2005)CrossRefGoogle Scholar
15.Tang, W.T., Ying, Z.F., Hu, Z.G., Li, W.W., Sun, J., Xu, N., Wu, J.D.Synthesis and characterization of HfO2 and ZrO2 thin films deposited by plasma assisted reactive pulsed laser deposition at low temperature. Thin Solid Films (submitted)Google Scholar
16.Zhao, X., Vanderbilt, D.First-principles study of structural, vibrational, and lattice dielectric properties of hafnium oxide. Phys. Rev. B 65, 233106 (2002)CrossRefGoogle Scholar
17.Lide, D.R.CRC Handbook of Chemistry and Physics 82nd ed. (CRC Press, Boca Raton, FL 2001) 5 3Google Scholar
18.Kornilov, A.N., Ushakova, I.M., Huber, E.J. Jr., Holley, C.E. Jr.The enthalpy of formation of hafnium dioxide. J. Chem. Thermodyn. 7, 21 (1975)CrossRefGoogle Scholar
19.Modreanu, M., Gartner, M., Aperathitis, E., Tomozeiu, N., Androulidaki, M., Cristea, D., Hurley, P.Investigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices. Physica E 16, 461 (2003)CrossRefGoogle Scholar
20.Hu, H., Zhu, C., Lu, Y.F., Wu, Y.H., Liew, T., Li, M.F., Cho, B.J., Choi, W.K., Yakovlev, N.Physical and electrical characterization of HfO2 metal–insulator–metal capacitors for Si analog circuit applications. J. Appl. Phys. 94, 551 (2003)CrossRefGoogle Scholar
21.Cho, Y.J., Nguyen, N., Richter, C.A., Ehrstein, J.R., Lee, B.H., Lee, J.C.Spectroscopic ellipsometry characterization of high-k dielectric HfO2 thin films and the high-temperature annealing effects on their optical properties. Appl. Phys. Lett. 80, 1249 (2002)CrossRefGoogle Scholar
22.Aarik, J., Mändar, H., Kirm, M., Pung, L.Optical characterization of HfO2 thin films grown by atomic layer deposition. Thin Solid Films 466, 41 (2004)CrossRefGoogle Scholar
23.Bendoraitis, J.G., Salomon, R.E.Optical energy gaps in the monoclinic oxides of hafnium and zirconium and their solid solutions. J. Phys. Chem. 69, 3666 (1965)CrossRefGoogle Scholar
24.Balog, M., Schieber, M., Michman, M., Patai, S.Chemical vapor deposition and characterization of HfO2 films from organo-hafnium compounds. Thin Solid Films 41, 247 (1977)CrossRefGoogle Scholar
25.Afanas'ev, V.V., Stesmans, A., Chen, F., Shi, X., Campbell, S.A.Internal photoemission of electrons and holes from (100)Si into HfO2. Appl. Phys. Lett. 81, 1053 (2002)CrossRefGoogle Scholar
26.Kato, H., Nango, T., Miyagawa, T., Katagiri, T., Seol, K.S., Ohki, Y.Plasma-enhanced chemical vapor deposition and characterization of high-permittivity hafnium and zirconium silicate films. J. Appl. Phys. 92, 1106 (2002)CrossRefGoogle Scholar