Hostname: page-component-cd9895bd7-gbm5v Total loading time: 0 Render date: 2024-12-26T13:20:04.593Z Has data issue: false hasContentIssue false

Analysis of the NdBa2Cu3Ox thin film growth mechanism by time of flight mass spectrometry of the laser plume

Published online by Cambridge University Press:  31 January 2011

M. Badaye
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 10–13 Shinonome, 1-chome, Koto-ku, Tokyo 135, Japan
K. Fukushima
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 10–13 Shinonome, 1-chome, Koto-ku, Tokyo 135, Japan
T. Morishita
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 10–13 Shinonome, 1-chome, Koto-ku, Tokyo 135, Japan
Get access

Abstract

Time of flight (TOF) spectroscopic measurements are used to diagnose the laser-generated plume of ceramic NdBa2Cu3Ox targets. We have been able to directly correlate the laser-deposited films' properties such as superconductivity, crystallinity, and orientation with plasma properties. Study of the TOF spectra shows that at laser fluences greater than 3 J/cm2 the plume become Nd-rich, and this leads to a low Tc in the deposited film. We have also shown the effect of target density on the energy of the plume species, and through energy considerations we have explained the observed change in the crystalline orientation of films from c- to a-orientation with increasing the target density. Finally, we have examined the oxidation mechanism of NdBa2Cu3Ox thin films, and have shown that highly energetic atomic oxygens have a prevailing role in oxidizing our laser-deposited thin films.

Type
Articles
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Badaye, M., Wang, F., Kanke, Y., Fukushima, K., and Morishita, T., Appl. Phys. Lett. 66, 2131 (1995).Google Scholar
2.Badaye, M., Wang, F., Fukushima, K., and Morishita, T., Supercond. Sci. Technol. 8, 638 (1995).Google Scholar
3.Fukushima, K., Kanke, Y., Badaye, M., and Morishita, T., Physica C 235, 573 (1994).CrossRefGoogle Scholar
4.Izumi, H., Ohata, K., Morishita, T., and Tanaka, S., in Superconductivity and Its Applications, edited by Kao, Y. H., Coppens, P., and Kwok, H. S., AIP Conf. Proc. No. 219 (AIP, New York, 1991), p. 224.Google Scholar
5.Mushburn, D. N. and Geohegan, D. B., SPIE 1187, 172 (1989).Google Scholar
6.Moore, C. E., Atomic Energy Levels, Vol. III, NSRDS-NBS 35 (1971).Google Scholar
7.Takita, K., Katoh, H., Akinaga, H., Nishino, M., Ishigaki, T., and Asano, H., Jpn. J. Appl. Phys. 27, L57 (1988).Google Scholar
8.Foote, M.C., Jones, B.B., Hunt, B. D., Barner, J. B., Vasquez, R.P., and Bajuk, L.J., Physica C 201, 176 (1992).Google Scholar
9.Singh, R. K., Holland, O. W., and Narayan, J., J. Appl. Phys. 68, 233 (1990).Google Scholar
10.Zheng, J. P., Huang, Z.Q., Shaw, D.T., and Kwok, H. S., Appl. Phys. Lett. 54, 280 (1989).Google Scholar
11.Mahajan, S., Ito, W., Yoshida, Y., and Morishita, T., Physica C 213, 445 (1993).CrossRefGoogle Scholar
12.Kwok, H. S., Shaw, D.T., Ying, Q. Y., Zheng, J.P., Witanachi, S., Petrou, E., and Kim, H. S., SPIE 1187, 161 (1989).Google Scholar