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Analysis of defect formation in Nb-doped SrTiO3 by impedance spectroscopy

Published online by Cambridge University Press:  31 January 2011

Seong-Ho Kim
Affiliation:
Material Science and Engineering Division, Korea Institute of Science and Technology, P.O. Box 131, Seoul, Korea
Jung-Ho Moon
Affiliation:
Material Science and Engineering Division, Korea Institute of Science and Technology, P.O. Box 131, Seoul, Korea
Jae-Hwan Park
Affiliation:
Material Science and Engineering Division, Korea Institute of Science and Technology, P.O. Box 131, Seoul, Korea
Jae-Gwan Park
Affiliation:
Material Science and Engineering Division, Korea Institute of Science and Technology, P.O. Box 131, Seoul, Korea
Yoonho Kim
Affiliation:
Material Science and Engineering Division, Korea Institute of Science and Technology, P.O. Box 131, Seoul, Korea
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Abstract

The thermal activation energies for conduction of Nb-doped SrTiO3 grains and grain boundaries have been investigated by impedance spectroscopy. First, to observe the effect of electrode/SrTiO3 bulk interface, the varied impedances of SrTiO3 single crystal were measured with temperatures. The activation energy of an electrode/bulk interface was determined to be 1.3 eV, whereas that of bulk was 0.8 eV. When the impedances of Nb-doped SrTiO3 ceramics were measured, it was suggested that the more precise impedance values of a single grain and a single grain to grain junction be obtained using a microelectrode method. The activation energies for a grain, a grain boundary, and an electrode/bulk interface were determined to be about 0.8, 1.3, and 1.5 eV, respectively. From these measured results, it was suggested that the activation energy, 0.8 eV, measured in grain was originated from oxygen vacancies and the activation energy, 1.3 eV, in grain boundary was from strontium vacancies.

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Articles
Copyright
Copyright © Materials Research Society 2001

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References

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