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Addition of Nb2O5 on the electrical properties of buried resistors in low-temperature cofired ceramics

Published online by Cambridge University Press:  31 January 2011

Ching-Tai Cheng ,
Jiang-Tsair Lin  and
Hong-Ching Lin
Ching-Tai Cheng
Affiliation:
Materials Research Laboratories, ITRI, Hsinchu, Taiwan 31040, Republic of China
Jiang-Tsair Lin
Affiliation:
Materials Research Laboratories, ITRI, Hsinchu, Taiwan 31040, Republic of China
Hong-Ching Lin
Affiliation:
Materials Research Laboratories, ITRI, Hsinchu, Taiwan 31040, Republic of China
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Abstract

Nb2O5 was added to buried resistors for low-temperature cofired ceramics, and the electrical properties of the resultant resistors were examined. Remarkable increases in electrical resistivity and attractive decreases in the temperature coefficient of resistance (TCR) were observed by the addition of Nb2O5, which was attributed to the high solubility of Nb2O5 into the PbO-SiO2-Al2O3 matrix glass. With higher dissolved contents of Nb2O5 into the glass, the resistivity of buried resistors increased by approximately six-fold magnitude, while TCR decreased substantially toward zero. It was indicated that the conductance for these buried resistors was limited by tunneling of charge carriers through the thin glass layer penetrating into the ruthenium-oxide agglomerates. A larger separation observed between RuO2 particles due to high solubility of Nb2O5 in the glass increased the charging energy (E) and lump term (Rbo), which in turn gave rise to a higher resistivity and a lower TCR value.

Type
Articles
Information
Journal of Materials Research , Volume 18 , Issue 5 , May 2003 , pp. 1211 - 1218
Copyright
Copyright © Materials Research Society 2003

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