Hostname: page-component-5d59c44645-jb2ch Total loading time: 0 Render date: 2024-03-02T12:17:04.700Z Has data issue: false hasContentIssue false

Temperature dependence of piezoelectric properties of 0.67 Pb(Mg1/3Nb2/3)O3–0.33 PbTiO3 single crystals

Published online by Cambridge University Press:  31 January 2011

Ping-chu Wang
Affiliation:
State Key Lab of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
Xiao-ming Pan
Affiliation:
State Key Lab of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
Dong-lin Li
Affiliation:
State Key Lab of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
Yuan-wei Song
Affiliation:
State Key Lab of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
Hao-su Luo
Affiliation:
State Key Lab of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
Zhi-wen Yin
Affiliation:
State Key Lab of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
Get access

Abstract

Piezoelectric properties k33 and d33 of 0.67 Pb(Mg1/3Nb2/3)O3–0.33 PbTiO3 single crystals grown by a modified Bridgman method were measured in the temperature range of 20–150 °C. Recoverability of the properties after the samples were heated to 110 °C, above the ferroelectric–ferroelectric (F–F) phase transition temperature of the composition, was found. From 20 to approximately 80 °C, k33 increases slightly, while d33 is almost doubled. Between approximately 90 and 100 °C, k33 decreases sharply to roughly a level of PZT-5 ceramics and d33 decreases to about 700 pC/N. They increase again with further increase of temperature; at 140 °C they attain 0.74 and approximately 1300 pC/N, respectively, and then decrease quickly and approach zero at about 150 °C. When heating to 110 °C followed by cooling to room temperature, the property decay is small. After more than one dozen heating–cooling cycles, k33 and d33 tend to be stable at 0.89 and approximately 1220 pC/N, respectively. The results might be helpful for device design and applications of PMN–PT single crystals.

Type
Articles
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Kuwata, J., Uchino, K., and Nomura, S., Jpn. J. Appl. Phys. 21, 1298 (1982).Google Scholar
Service, R.F., Science 275, 1878 (1997).Google Scholar
Yin, Z-W., Luo, H-S., Wang, P-C., and Xu, G-S., Ferroelectrics 229, 207 (1999).Google Scholar
Wang, P-C., Luo, H-S., Li, D-L., Pan, X-M., Chen, X-C., and Yin, Z-W., Wuji Cailiao Xuebao 16, 56 (2001) (in Chinese); P-C. Wang, H-S. Luo, X-M. Pan, D-L. Li, and Z-W. Yin, in Proceedings of the 2000 12th IEEE International Symposium on Applied Ferroelectrics, edited by S.K. Streiffer, B.T. Gibbons, and T. Tsuruni (IEEE, Piscataway, NJ, 2001) pp. 537–540.Google Scholar
Park, S-E. and Shrout, T.R., IEEE Trans. Ultrason, Ferroelectr. Freq. Control 44, 1140 (1997).Google Scholar
Park, S-E. and Shrout, T.R., Mater. Res. Innov. 1, 20 (1997).Google Scholar
Oakley, C.G. and Zipparo, M.J., 2000 IEEE Ultrasonics Symposium, Proceedings (IEEE, Piscataway, NJ, 2000), pp. 11571167.Google Scholar
Choi, S.W., Shrout, T.R., Jang, S.J., and Bhalla, A.S., Mater. Lett. 8, 253 (1989).Google Scholar
Xu, G-S., Luo, H-S., Xu, H-Q., and Yin, Z-W., Phys. Rev. B 64, 020102(3) (2001).Google Scholar
IEEE Standard on Piezoelectricity, ANSI/IEEE Std. 176-1987 (1988).Google Scholar
Wang, T-B., Guisuanyan Xuebao, 9, 44 (1981) (in Chinese) and references therein.Google Scholar
Yu, X-D., Xinshing Wuji Cailiao 12, 34 (1984) (in Chinese).Google Scholar
Ye, Z-G., Noheda, B., Dong, M., Cox, D., and Shirane, G., Phys. Rev. B 64, 184114 (2001).Google Scholar
Kiat, J-M., Uesu, Y., Dkhil, B., Matsuda, M., Malibert, C., and Calvarin, G., Phys. Rev. B 65, 064106 (2002).Google Scholar
Durbin, M.K., Hicks, J.C., Park, S-E., Shrout, T.R., J. Appl. Phys. 87, 8159 (2000).Google Scholar
Guo, R., Cross, L.E., Park, S-E., Noheda, B., Cox, D.E., Shirane, G., Phys. Rev. Lett. 84, 5423 (2000).Google Scholar
Noheda, B., Gonzalo, J.A., Cross, L.E., Guo, R., Park, S-E., Cox, D.E., Shirane, G., Phys. Rev. B 61, 8687 (2000).Google Scholar