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Study of Te nanoprecipitates in CdZnTe crystals

Published online by Cambridge University Press:  31 January 2011

Guoqiang Li ,
Shao-Ju Shih ,
Shichun Mu ,
Yadong Xu  and
Wanqi Jie
Guoqiang Li*
Affiliation:
Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom; and State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
Shao-Ju Shih
Affiliation:
Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom
Shichun Mu
Affiliation:
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
Wanqi Jie
Affiliation:
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, China
*
a)Address all correspondence to this author. e-mails: guoqiang.li@materials.ox.ac.uk; guoqiang.lee@gmail.com
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Abstract

In-depth studies of the two types of Te nanoprecipitates, linear and elliptic, in Cd1–xZnxTe (CZT) crystals grown by a modified vertical Bridgman method have been carried out. Electron diffraction suggests that linear Te nanoprecipitates align their Te atoms in a similar way to CZT structure, while elliptic Te nanoprecipitates cluster Te atoms following the pure trigonal Te structure. The three-dimensional morphology for both linear and elliptic Te nanoprecipitates has been revealed by delicate energy-dispersive x-ray analysis under electron microscopy. The density of elliptic Te nanoprecipitates ranges from 1015 to 1017 cm−3, while linear ones usually several times lower for a certain CZT wafer. The origin of both types of Te nanoprecipitates has been discussed in terms of the local density of intrinsic point defects in CZT. CZT properties are influenced more negatively by elliptic Te nanoprecipitates, which shed light on the methodology for crystal growth: preventing the clustering of intrinsic point defects during the crystal growth will be essential to obtain high quality CZT crystal.

Keywords

CompoundElectronic materialNanostructure
Type
Articles
Information
Journal of Materials Research , Volume 25 , Issue 7 , July 2010 , pp. 1298 - 1303
Copyright
Copyright © Materials Research Society 2010

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