Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-18T21:49:24.517Z Has data issue: false hasContentIssue false
  • English
  • Français

Reactive ion etching damage to the electrical properties of ferroelectric thin films

Published online by Cambridge University Press:  31 January 2011

W. Pan ,
C. L. Thio  and
S. B. Desu
W. Pan
Affiliation:
Materials Science and Engineering Department, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061-0237
C. L. Thio
Affiliation:
Materials Science and Engineering Department, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061-0237
S. B. Desu
Affiliation:
Materials Science and Engineering Department, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061-0237
Get access

Extract

Reactive ion etching damage to Pt/Pb(Zr, Ti)O3/Pt ferroelectric capacitors was evaluated under Ar bombardment and CHClFCF3 etch plasmas. The hysteresis and degradation properties, including fatigue and leakage current, were examined systematically to study the mechanism of damage. The damage was measured quantitatively by comparing the relative voltage shift with respect to the initial hysteresis loops. The damage effects were found to be dependent on etching time and mainly due to the physical effect of ion bombardment. The electrical properties of the etched Pt/Pb(Zr, Ti)O3/Pt capacitors were substantially recovered by annealing at 400 °C for 30 min.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 2 , February 1998 , pp. 362 - 367
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Wolf, S. and Tauber, R.N., Silicon Processing for VLSI Era (Lattice Press, Sunset Beach, CA, 1986).Google Scholar
2.Pang, S.W., Solid State Technology 27, 249 (1984).Google Scholar
3.Semiconductor Materials and Process Technology Handbook, edited by Mcguire, G. E. (Noyes Publications, Park Ridge, NJ, 1988).Google Scholar
4.Flamm, D. L., Cowan, P. L., and Golovchenko, J.A., J. Vac. Sci. Technol. 17, 1341 (1980).Google Scholar
5.Paraszczzk, J. and Hatzakis, M., J. Vac. Sci. Technol. 19, 1412 (1981).Google Scholar
6.Fonash, S. J., Ashok, S., and Singh, R., Appl. Phys. Lett. 39, 423 (1981).CrossRefGoogle Scholar
7.Mikkelsen, J. C. Jr. and Wu, I-W., Appl. Phys. Lett. 49, 1617 (1986).Google Scholar
8.Pang, S.W., Rathman, D.D., Silversmith, D. J., Mountain, R.W., and DeGraff, P.D., J. Appl. Phys. 54, 3272 (1983).CrossRefGoogle Scholar
9.Deppe, H.R., Hasler, B., and Hopfner, J., Solid State Electron. 20, 51 (1977).CrossRefGoogle Scholar
10.Porker, L.H. and Tasch, Al. F., IEEE Circuit Device Mag. 6, 17 (1990).CrossRefGoogle Scholar
11.Kawaguchi, T., Adachi, H., Setsune, K., Yamazaki, O., and Wasa, K., Appl. Opt. 23, 2187 (1984).CrossRefGoogle Scholar
12.Poor, R. and Fleddermann, C. B., J. Appl. Phys. 70, 3385 (1991).Google Scholar
13.Saito, K., Choi, J.H., Fukuda, T., and Ohoe, M., Jpn. J. Appl. Phys. 31, L1260 (1992).CrossRefGoogle Scholar
14.van Glabbeek, J. J., Spierings, G.A.C.M., Ulenaers, M. J. E., Dormans, G. J.M., and Larsen, P.K., in Ferroelectric Thin Films III, edited by Tuttle, B.A., Myers, E.R., Desu, S. B., and Larsen, P.K. (Mater. Res. Soc. Symp. Proc. 310, Pittsburgh, PA, 1993).Google Scholar
15.Pan, W. and Desu, S. B., J. Mater. Res. 9, 2976 (1994).Google Scholar