Hostname: page-component-797576ffbb-pxgks Total loading time: 0 Render date: 2023-12-11T20:35:03.068Z Has data issue: false Feature Flags: { "corePageComponentGetUserInfoFromSharedSession": true, "coreDisableEcommerce": false, "useRatesEcommerce": true } hasContentIssue false

Oxygen Permeability of Ferroelectric Thin Film Top Electrodes and Its Effect on Detectable Fatigue Cycling-Induced Oxygen Isotope Motion

Published online by Cambridge University Press:  03 March 2011

Lawrence F. Schloss*
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
Hyoungsub Kim
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
Paul C. McIntyre
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
a)Address all correspondence to this author. e-mail:
Get access


We investigated the discrepancy between the significant 18O isotope motion observed after bipolar voltage cycling used to induce ferroelectric fatigue in unannealed Pt/Pb(Zr,Ti)O3/Ir (PZT) capacitors and the lack of any observable oxygen tracer motion in annealed capacitors. We found that while unannealed Pt electrodes are permeable to oxygen, annealed Pt electrodes are oxygen impermeable. Further, when the initial oxygen tracer profile does not vary strongly with depth, the ability to detect oxygen motion during fatigue voltage cycling depends critically on the oxygen permeability of the capacitor’s top electrode. Our results indicate that oxygen exchange between the PZT film and external oxygen sources and sinks during voltage cycling is not necessary for ferroelectric fatigue to be manifest. In addition, studies of the dependence of ferroelectric materials properties on ambient gases should be accompanied by analysis of the permeability of exposed surfaces to the gases of interest.

Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)



1Yoo, I.K. and Desu, S.B.: Phys. Status Solidi A. 133, 565 (1992).Google Scholar
2Warren, W.L., Pike, G.E., Vanheusden, K., Dimos, D., Tuttle, B.A. and Robertson, J.: J. Appl. Phys. 79, 9250 (1996).Google Scholar
3Park, C.H. and Chadi, D.J.: Phys. Rev. B. 57 R13961 (1998).Google Scholar
4Pöykkö, S. and Chadi, D.J.: Phys. Rev. Lett. 83, 1231 (1999).Google Scholar
5Dawber, M. and Scott, J.F.: Appl. Phys. Lett. 76, 1060 (2000).Google Scholar
6Dawber, M. and Scott, J.F.: Appl. Phys. Lett. 76, 3655 (2000).Google Scholar
7Scott, J.F. and Dawber, M.: Appl. Phys. Lett. 76, 3801 (2000).Google Scholar
8Lupascu, D.C. and Rabe, U.: Phys. Rev. Lett. 89, 187601 (2002).Google Scholar
9Lo, V.C.: J. Appl. Phys. 92, 6778 (2002).Google Scholar
10Scott, J.F., Araujo, C.A., Melnick, B.M., McMillan, L.D. and Zuleeg, R.: J. Appl. Phys. 70, 382 (1991).Google Scholar
11Pan, M-J., Park, S-E., Park, C.W., Markowski, K.A., Yoshikawa, S. and Randall, C.A.: J. Am. Ceram. Soc. 79, 2971 (1996).Google Scholar
12Nuffer, J., Lupascu, D.C., Rödel, J. and Schroeder, M.: Appl. Phys. Lett. 79, 3675 (2001).Google Scholar
13Brazier, M., Mansour, S. and McElfresh, M.: Appl. Phys. Lett. 74, 4032 (1999).Google Scholar
14McCormick, M.A., Slamovich, E.B., Metcalf, P. and McElfresh, M. in Ferroelectric Thin Films X edited by Gilbert, S.R., Trolier-McKinstry, S., Miyasaka, Y., Streiffer, S.K., and Wouters, D.J. (Mater. Res. Soc. Symp. Proc. 688, Warrendale, PA, 2002), p. 113Google Scholar
15Schloss, L.F., McIntyre, P.C., Hendrix, B.C., Bilodeau, S.M., Roeder, J.F. and Gilbert, S.R.: Appl. Phys. Lett. 81, 3218 (2002).Google Scholar
16Roeder, J.F., Baum, T.H., Bilodeau, S.M., Stauf, G.T., Ragaglia, C., Russell, M.W. and VanBuskirk, P.C.: Adv. Mater. Opt. Electron. 10, 145 (2000).Google Scholar
17 SIMS measurements were performed at Charles Evans & Associates, 810 Kifer Road, Sunnyvale, CA 94086.Google Scholar
18Jung, D.J., Dawber, M., Ruediger, A., Scott, J.F., Kim, H.H. and Kim, K.: Appl. Phys. Lett. 81, 2436 (2002).Google Scholar
19Schmiedl, R., Demuth, V., Lahnor, P., Godehardt, H., Bodschwinna, Y., Harder, C., Hammer, L., Strunk, H.P., Schulz, M. and Heinz, K.: Appl. Phys. A Mater. Sci. Proc. A62, 223 (1996).Google Scholar
20Maeder, T., Sagalowicz, L. and Muralt, P.: Jpn. J. Appl. Phys. 37, 2007 (1998).Google Scholar
21Matsui, Y., Suga, M., Hiratani, M., Miki, H. and Fujisaki, Y.: Jpn. J. Appl. Phys. 36 L1239 (1997).Google Scholar
22Stumpf, R., Liu, C-L. and Tracy, C.: Appl. Phys. Lett. 75, 1389 (1999).Google Scholar
23Moulder, J.F., Stickle, W.F., Sobol, P.E. and Bomben, K.D.: Handbook of X-ray Photoelectron Spectroscopy (Perkin-Elmer Corporation, Minnesota, 1992), pp. 188189Google Scholar
24Hosoda, H. and Wakashima, K.: Mater. Sci. Eng. A. A352, 16 (2003).Google Scholar
25Waser, R.: J. Am. Ceram. Soc. 74, 1934 (1991).Google Scholar