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Low-temperature chemical vapor deposition of tantalum nitride from tantalum pentabromide for integrated circuitry copper metallization applications

Published online by Cambridge University Press:  31 January 2011

Xiaomeng Chen
Affiliation:
New York State Center for Advanced Thin Film Technology and Department of Physics, The University at Albany–State University of New York, Albany, New York 12222
Gregory G. Peterson
Affiliation:
New York State Center for Advanced Thin Film Technology and Department of Physics, The University at Albany–State University of New York, Albany, New York 12222
Cindy Goldberg
Affiliation:
New York State Center for Advanced Thin Film Technology and Department of Physics, The University at Albany–State University of New York, Albany, New York 12222
Gerry Nuesca
Affiliation:
New York State Center for Advanced Thin Film Technology and Department of Physics, The University at Albany–State University of New York, Albany, New York 12222
Harry L. Frisch
Affiliation:
New York State Center for Advanced Thin Film Technology and Department of Physics, The University at Albany–State University of New York, Albany, New York 12222
Alain E. Kaloyeros
Affiliation:
New York State Center for Advanced Thin Film Technology and Department of Physics, The University at Albany–State University of New York, Albany, New York 12222
Barry Arkles
Affiliation:
Gelest Inc., Tullytown, Pennsylvania 19007
John Sullivan
Affiliation:
MKS Instruments Inc., Andover, Massachusetts 01810
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Abstract

A low-temperature (>450 °C) thermal chemical vapor deposition (CVD) process was developed for the growth of TaNx from the reaction of tantalum pentabromide, ammonia, and hydrogen. Studies of process reaction kinetics yielded two sequential rate-controlling steps, with an activation energy of 0.45 eV for the kinetically limited reaction regime. Additionally, a systematic design of experiments approach examined the effects of key process parameters, namely, substrate temperature, source temperature, and hydrogen and ammonia flows, on film properties. A wide CVD process window was established for nitrogen-rich amorphous TaNx with contamination below 1 at.%. Film conformality was higher than 95% in nominally 0.30 μm, 4.5: 1 aspect ratio, trench structures.

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Copyright
Copyright © Materials Research Society 1999

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Low-temperature chemical vapor deposition of tantalum nitride from tantalum pentabromide for integrated circuitry copper metallization applications
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