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Interface states in ZnO varistor with Mn, Co, and Cu impurities

Published online by Cambridge University Press:  03 March 2011

Yoshihiko Yano
Affiliation:
R&D Center, TDK Corporation, 2–15–7 Higashioowada, Ichikawa-shi, Chiba 272, Japan
Yoshizo Takai
Affiliation:
R&D Center, TDK Corporation, 2–15–7 Higashioowada, Ichikawa-shi, Chiba 272, Japan
Hisao Morooka
Affiliation:
R&D Center, TDK Corporation, 2–15–7 Higashioowada, Ichikawa-shi, Chiba 272, Japan
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Abstract

The interface states in ZnO with impurities of transition-metals, Mn, Co, and Cu, were investigated by the DLTS (deep-level transient spectroscopy) measurements in ZnO/PrCoOx/ZnO junctions as model systems of ZnO ceramic varistors and by the SCF-Xα-SW molecular orbital calculations using simplified cluster models. The DLTS signals, correlated to the doping of Mn and Co, are obtained with ZnO/PrCox/ZnO junctions. The signals correspond to the interface states due to the transition-metal doping. Xα calculations indicate that the interface states attributed to the doping of transition-metals, Mn, Co, and Cu, in ZnO are created between the valence band and the conduction band, which consist of transition-metals 3d character. The impurities of transition-metals affect interface states as well as the adsorbed excess oxygen.

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Copyright
Copyright © Materials Research Society 1994

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Footnotes

b)

Present address: Department of Applied Physics, Osaka University, Suita, Osaka 565, Japan.

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