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High-resolution x-ray topography of dislocations in 4H-SiC epilayers

Published online by Cambridge University Press:  03 March 2011

Isaho Kamata*
Affiliation:
CRIEPI (Central Research Institute of Electric Power Industry, Materials Science Research Laboratory, Yokosuka, Kanagawa 240-0196, Japan
Hidekazu Tsuchida
Affiliation:
CRIEPI (Central Research Institute of Electric Power Industry, Materials Science Research Laboratory, Yokosuka, Kanagawa 240-0196, Japan
William M. Vetter
Affiliation:
State University of New York, Department of Materials Science and Engineering, Stony Brook, New York 11794-2275
Michael Dudley
Affiliation:
State University of New York, Department of Materials Science and Engineering, Stony Brook, New York 11794-2275
*
a) Address all correspondence to this author. e-mail: kamata@criepi.denken.or.jp This paper was selected as the Outstanding Meeting Paper for the 2006 MRS Spring Meeting Symposium B Proceedings, Vol. 911.
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Abstract

Synchrotron x-ray topography with a high-resolution setup using 1128 reflection was carried out on 4H-SiC epilayers. Four different shapes of threading-edge dislocation according to Burgers vector direction were observed. The four types of threading-edge dislocation images were calculated by computer simulation, and the experimental results correlated well with the simulation results. The detailed topographic features generated by plural screw dislocations and basal plane dislocations were also investigated.

Keywords

Type
Outstanding Meeting Papers:Review
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1Sugawara, Y.: Recent Progress in SiC Device Developments and Application Studies, ISPSD2003 Proc., Kitakyusyu, Japan, 2003, p. 10.Google Scholar
2Neudeck, P.G. and Powell, J.A.: Performance limiting micropipe defects in silicon carbide wafers. IEEE Electron Device Lett. 15, 63 (1994).CrossRefGoogle Scholar
3Bergman, J.P., Lendenmann, H., Nilsson, P.A., Lindefelt, U., and Skytt, P.: Crystal defects as source of anomalous forward voltage increase of 4H-SiC diodes. Mater. Sci. Forum 353–356, 299 (2001).CrossRefGoogle Scholar
4Jenny, J.R., Malta, D.P., Calus, M.R., Muller, St.G., Powell, A.R., Tsvetkov, V.F., Hobgood, H.McD., Glass, R.C., and Carter, C.H. Jr.: Development of large diameter high-purity semi-insulating 4H-SiC wafers for microwave devices. Mater. Sci. Forum 457, 35 (2004).CrossRefGoogle Scholar
5Kamata, I., Tsuchida, H., Jikimoto, T., and Izumi, K.: Structural transformation of screw dislocations via thick 4H-SiC epitaxial growth. Jpn. J. Appl. Phys. 39, 6496 (2000).CrossRefGoogle Scholar
6Nakamura, D., Gunjishima, I., Yamaguchi, S., Ito, T., Okamoto, A., Kondo, H., Onda, S., and Takatori, K.: Ultrahigh-quality silicon carbide single crystals. Nature 430, 1009 (2004).CrossRefGoogle ScholarPubMed
7Ohno, T., Yamaguchi, H., Kuroda, S., Kojima, K., Suzuki, T., and Arai, K.: Direct observation of dislocations propagated from 4H-SiC substrate to epitaxial layer by x-ray topography. J. Cryst. Growth 260, 209 (2004).CrossRefGoogle Scholar
8Vetter, W., Tsuchida, H., Kamata, I., and Dudley, M.: Simulation of threading dislocation images in x-ray topographs of silicon carbide homo-epilayers. J. Appl. Crystallogr. 8, 442 (2005).CrossRefGoogle Scholar
9Tsuchida, H., Kamata, I., Jikimoto, T., and Izumi, K.: Epitaxial growth of thick 4H-SiC layers in a vertical radiant-heating reactor. J. Cryst. Growth 237–239, 1206 (2002).CrossRefGoogle Scholar
10Dudley, M., Huang, X.R., Huang, W., Powell, A., Wang, S., Neudeck, P., and Skowronski, M.: The mechanism of micropipe nucleation at inclusions in silicon carbide. Appl. Phys. Lett. 75, 784 (1999).CrossRefGoogle Scholar

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