Hostname: page-component-5d59c44645-mrcq8 Total loading time: 0 Render date: 2024-02-29T04:46:03.186Z Has data issue: false hasContentIssue false

Highly (200)-oriented Pt films on SiO2/Si substrates by seed selection through amorphization and controlled grain growth

Published online by Cambridge University Press:  31 January 2011

Min Hong Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Tae-Soon Park
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Dong-Su Lee
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Euijoon Yoon*
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Dong-Yeon Park
Affiliation:
Advanced Materials Area, Tong Yang Central Laboratories, Yongin, Kyungki 449-910, Korea
Hyun-Jung Woo
Affiliation:
Advanced Materials Area, Tong Yang Central Laboratories, Yongin, Kyungki 449-910, Korea
Dong-Il Chun
Affiliation:
Advanced Materials Area, Tong Yang Central Laboratories, Yongin, Kyungki 449-910, Korea
Jowoong Ha
Affiliation:
Advanced Materials Area, Tong Yang Central Laboratories, Yongin, Kyungki 449-910, Korea
Get access

Abstract

Highly (200)-oriented Pt films on SiO2/Si substrates were successfully prepared by a combination of a dc magnetron sputtering using Ar/O2 gas mixtures and subsequent controlled annealing. The intensity ratio of (200) to (111) planes (I200/I111) was over 200. The (200)-oriented Pt microcrystallites were less susceptible to amorphization due to their lower strain energy with oxygen incorporation than (111)-oriented ones. The controlled grain growth from the selected (200)-oriented seed microcrystallites during subsequent annealing provided a kinetic pathway where grain growth of the seed microcrystallites was predominant, while suppressing the nucleation of surface energy-driven, (111)-oriented seed microcrystallites and subsequent (111) preferred orientation.

Type
Articles
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Moazzami, R., Semicond. Sci. Technol. 10, 375 (1995).Google Scholar
2.Sheppard, L.M., Ceram. Bull. 71, 85 (1992).Google Scholar
3.Scott, J. F. and Paz De Arauio, C. A., Science 246, 1400 (1989).Google Scholar
4.Al-Shareef, H. N., Gifford, K. D., Rou, S. H., Hren, P. D., Auciello, O., and Kingon, A., Integrated Ferroelectrics 3, 321 (1993).Google Scholar
5.Hren, P. D., Rou, S. H., Al-Shareef, H. N., Ameen, M. S., Auciello, O., and Kingon, A., Integrated Ferroelectrics 2, 311 (1992).Google Scholar
6.Okuyama, M. and Hamakawa, Y., Int. J. Eng. Sci. 29, 391 (1991).Google Scholar
7.Ogawa, T., Senda, A., and Kasnami, T., Jpn. J. Appl. Phys. 30, 2145 (1991).Google Scholar
8.Hwang, C. S., Park, S.O., Kang, C. S., Cho, H-J., Kang, H-K., Ahn, S. T., and Lee, M. Y., Jpn. J. Appl. Phys. 34, 5178 (1995).Google Scholar
9.Al-Shareef, H. N., Bellur, K. R., Auciello, O., and Kingon, A. I., Ferroelectrics 152, 85 (1994).Google Scholar
10.Iijima, K., Tomita, Y., Takayama, R., and Ueda, I., J. Appl. Phys. 60, 361 (1986).Google Scholar
11.Kim, S. and Baik, S., J. Vac. Sci. Technol. A 13, 95 (1995).Google Scholar
12.Hecq, M. and Hecq, A., J. Vac. Sci. Technol. 18, 219 (1981).Google Scholar
13.Kim, M. H., Park, T-S., Yoon, E., Lee, D-S., Park, D-Y., Woo, H-J., Chun, D-I., and Ha, J., J. Mater. Res. (1999, in press).Google Scholar
14.CRC Handbook of Chemistry and Physics, 68th ed. (CRC Press Inc. Boca Raton, FL, 1987).Google Scholar
15.Park, D-Y., Lee, D-S., Kim, M. H., Park, T-S., Woo, H-J., Yoon, E., Chun, D-I., and Ha, J., in Thin Films—Structure and Morphology, edited by Moss, S. C., Ila, D., Cammarata, R. C., Chason, E. H., Einstein, T. L., and Williams, E. D. (Mater. Res. Soc. Symp. Proc. 441, Pittsburgh, PA, 1997), p. 335.Google Scholar