Hostname: page-component-848d4c4894-ndmmz Total loading time: 0 Render date: 2024-05-25T20:51:58.447Z Has data issue: false hasContentIssue false

Electrical characterization of low defect density nonpolar (11¯20) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)

Published online by Cambridge University Press:  31 January 2011

Bilge Imer*
Affiliation:
University of California–Santa Barbara, Materials Department, Santa Barbara, California 93106; and Exploratory Research for Advanced Technology, Japan Science and Technology Corporation (NICP/ERATO JST) Group, University of California–Santa Barbara, Santa Barbara, California 93106
Benjamin Haskell
Affiliation:
University of California–Santa Barbara, Materials Department, Santa Barbara, California 93106; and Exploratory Research for Advanced Technology, Japan Science and Technology Corporation (NICP/ERATO JST) Group, University of California–Santa Barbara, Santa Barbara, California 93106
Siddharth Rajan
Affiliation:
University of California–Santa Barbara, Electrical and Computer Engineering Department, Santa Barbara, California 93106
Stacia Keller
Affiliation:
University of California–Santa Barbara, Electrical and Computer Engineering Department, Santa Barbara, California 93106
Umesh K. Mishra
Affiliation:
University of California–Santa Barbara, Electrical and Computer Engineering Department, Santa Barbara, California 93106
Shuji Nakamura
Affiliation:
University of California–Santa Barbara, Materials Department, Santa Barbara, California 93106; Exploratory Research for Advanced Technology, Japan Science and Technology Corporation (NICP/ERATO JST) Group, University of California–Santa Barbara, Santa Barbara, California 93106; and University of California–Santa Barbara, Electrical and Computer Engineering Department, Santa Barbara, California 93106
James S. Speck
Affiliation:
University of California–Santa Barbara, Materials Department, Santa Barbara, California 93106; and Exploratory Research for Advanced Technology, Japan Science and Technology Corporation (NICP/ERATO JST) Group, University of California–Santa Barbara, Santa Barbara, California 93106
Steven P. DenBaars
Affiliation:
University of California–Santa Barbara, Materials Department, Santa Barbara, California 93106; Exploratory Research for Advanced Technology, Japan Science and Technology Corporation (NICP/ERATO JST) Group, University of California–Santa Barbara, Santa Barbara, California 93106; and University of California–Santa Barbara, Electrical and Computer Engineering Department, Santa Barbara, California 93106
*
a) Address all correspondence to this author. e-mail: bilge@engineering.ucsb.edu
Get access

Abstract

We studied the effect of extended defects on electrical characteristics of Si doped n-type nonpolar a-plane GaN films. The n-type GaN layers were grown on co-loaded reduced defect density sidewall lateral epitaxial overgrowth (SLEO) a-plane GaN templates and high defect density planar a-plane GaN templates by metalorganic chemical vapor deposition (MOCVD). The highest conductivity value was observed at the carrier concentration of 1.05 × 1019 cm−3 as 261.12 cm2/Vs for SLEO a-GaN and 106.77 cm2/Vs for the planar a-plane GaN samples. At the same doping level, the carrier compensation for SLEO samples was ∼12% less than planar samples.

Type
Articles
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Waltereit, P., Brandt, O., Ramsteiner, M., Uecker, R., Reiche, P.Ploog, K.H.: Growth of m-plane GaN (1−100) on γ-LiAlO2 (100). J. Cryst. Growth 218, 143 2000CrossRefGoogle Scholar
2Bhattacharyya, A., Friel, I., Iyer, S., Chen, T-C., Li, W., Cabalu, J., Fedyunin, Y., Ludwig, K.F. Jr., Moustakas, T.D., Maruska, H-P., Hill, D.W., Gallagher, J.J., Chou, M.C.Chai, B.: Comparative study of GaN/AlGaN MQWs grown homoepitaxially on (1¯100) and (0001) GaN. J. Cryst. Growth 251, 487 2003CrossRefGoogle Scholar
3Garret, G.A., Shen, H., Wraback, M., Imer, B., Haskell, B., Speck, J.S., Keller, S., Nakamura, S.DenBaars, S.P.: Intensity dependent time-resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a-plane and planar c-plane GaN. Phys. Status Solidi A 5, 846 2005CrossRefGoogle Scholar
4Imer, B., Wu, F., Craven, M.D., Speck, J.S.DenBaars, S.P.: Stability of (1¯100) m-plane GaN films grown by metalorganic chemical vapor deposition (MOCVD). Jpn. J. Appl. Phys. 45, 8644 2006CrossRefGoogle Scholar
5Hwang, C.Y., Schurman, M.J., Mayo, W.E., Lu, Y.C., Stall, R.A.Salagajj, T.: Effect of structural defects and chemical impurities on hall mobilities in low pressure MOCVD grown GaN. J. Electron. Mater. 26, 243 1997CrossRefGoogle Scholar
6Craven, M.D., Chakraborty, A., Imer, B., Wu, F., Keller, S., Mishra, U.K., Speck, J.S.DenBaars, S.P.: Structural and electrical characterization of a-plane GaN grown on a-plane SiC. Phys. Status Solidi C 0(7), 2132 2003CrossRefGoogle Scholar
7Kusakabe, K.Okhawa, K.: Morphological characteristics of a-plane GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy. Jpn. J. Appl. Phys. 44, 7931 2005CrossRefGoogle Scholar
8Weimann, N.S., Eastman, L.F., Doppalapudi, D., Ng, H.M.Moustakas, T.D.: Scattering of electrons at threading dislocations in GaN. J. Appl. Phys. 83, 3656 1998CrossRefGoogle Scholar
9Look, D.C.Sizelove, J.R.: Dislocation scattering in GaN. Appl. Phys. Lett. 82, 1237 1999CrossRefGoogle Scholar
10Brazel, E.G., Chin, M.A.Narayanamurti, V.: Direct observation of localized high current densities in GaN films. Appl. Phys. Lett. 74, 2367 1999CrossRefGoogle Scholar
11Leung, K., Wright, A.F.Stechel, E.B.: Charge accumulation at a threading edge dislocation in gallium nitride. Appl. Phys. Lett. 74, 2495 1999CrossRefGoogle Scholar
12Imer, B., Wu, F., DenBaars, S.P.Speck, J.S.: Improved quality (11¯20) a-plane GaN with sidewall lateral epitaxial overgrowth. Appl. Phys. Lett. 88, 061908 2006CrossRefGoogle Scholar
13Craven, M.D., Lim, S.H., Wu, F., Speck, J.S.DenBaars, S.P.: Threading dislocation reduction via laterally overgrown nonpolar (11¯20) a-plane GaN. Appl. Phys. Lett. 81, 1201 2002CrossRefGoogle Scholar
14Chen, C., Zhang, J., Yang, J., Adivarhan, V., Rai, S., Wu, S., Wang, H., Sun, W., Su, M., Gong, Z., Kuokstis, E., Gaevski, M.Khan, M.A.: A new selective area lateral epitaxy approach for depositing a-plane GaN over r-plane sapphire. Jpn. J. Appl. Phys. 42, L818 2003CrossRefGoogle Scholar