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CuSiGe-catalyzed growth of Si1−xGexOynanowire assemblies with various morphologies

Published online by Cambridge University Press:  31 January 2011

Chih-Yuan Ko
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan 70101, Republic of China
Wen-Yuan Hsieh
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan 70101, Republic of China
Ting-Jui Hsu
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan 70101, Republic of China
Wen-Tai Lin*
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan 70101, Republic of China
a)Address all correspondence to this author. e-mail:
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Si1−xGexOynanowire (SiGeONW) assemblies with cord-, chain-, and tubelike morphologies were grown on a Si substrate via the carbothermal reduction of GeO2/CuO powders at 1100 °C in Ar. The growth of various SiGeONWs assemblies follows the vapor-liquid-solid process. The CuSiGe droplets formed during the growth of SiGeONWs simultaneously play the roles of catalyst and reactant. The morphology of SiGeONWs assemblies is not temperature controlled but dependent on the Cu concentration and the size of CuSiGe catalysts. This phenomenon is unlike the Ge- and Ga-catalyzed growth of SiOxnanowire assemblies. In addition, the processing parameters and the mechanisms for the growth of SiGeONWs assemblies with various morphologies are discussed.

Copyright © Materials Research Society2007

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