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Characterization of InP wafers by use of a system for high resolution photoluminescence imaging
Published online by Cambridge University Press: 31 January 2011
Abstract
An apparatus for acquisition of highly resolved macroscopic photoluminescence topograms has been developed, using a laser scanner for PL excitation, and a linear diode array as imaging device. As a typical application, room temperature PL-topograms of various 2″ In P wafers are presented and discussed. Substrate inhomogeneities revealed in these topograms are growth striations, dendrites, and subsurface damage from wafer handling and processing.
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- Copyright © Materials Research Society 1991
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