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Annealing behaviors of structural, interfacial and optical properties of HfO2 thin films prepared by plasma assisted reactive pulsed laser deposition

Published online by Cambridge University Press:  31 January 2011

Wentao Tang
Key Laboratory for Advanced Photonic Materials and Devices, Ministry of Education, Department of Optical Science and Engineering, Fudan University, Shanghai 200433, People's Republic of China
Wenwu Li
Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, People's Republic of China
Jiada Wu*
Key Laboratory for Advanced Photonic Materials and Devices, Ministry of Education, Department of Optical Science and Engineering, Fudan University, Shanghai 200433, People's Republic of China
a)Address all correspondence to this author. e-mail:
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The structure and properties of HfO2 films deposited by plasma assisted reactive pulsed laser deposition and annealed in N2 were studied upon thermal annealing as well as the evaluation of thermal stability by Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and optical transmission measurements. The as-deposited HfO2 films appear predominantly monoclinic with an amorphous matrix which becomes crystallized after high-temperature annealing. No interfacial SiOx is observed for the as-deposited films on Si. The deposited HfO2 films exhibit good thermal stability and show excellent transparency in a wide spectral range with optical band gap energies of 5.65–5.73 eV depending on annealing temperature. An improvement in the optical properties by high-temperature annealing is also observed.

Copyright © Materials Research Society 2010

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