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Nonlinear modeling, time-domain analysis and simulation of non-Foster elements

Published online by Cambridge University Press:  13 September 2016

Hamed Khoshniyat
Affiliation:
Department of Electrical Engineering, Amirkabir University of Technology, Tehran, 15914, Iran. Phone: +98-21-64543325
Abdolali Abdipour
Affiliation:
Department of Electrical Engineering, Amirkabir University of Technology, Tehran, 15914, Iran. Phone: +98-21-64543325
Gholamreza Moradi*
Affiliation:
Department of Electrical Engineering, Amirkabir University of Technology, Tehran, 15914, Iran. Phone: +98-21-64543325
*
Corresponding author: G. Moradi Email: ghmoradi@aut.ac.ir

Abstract

In this paper, the structure of a common field-effect transistor (FET)-based negative impedance converter (NIC) that behaves as a negative capacitor is presented. The nonlinear modeling, analysis, and simulation of this non-Foster structure are presented in the time domain and the transient response of the circuit can be used to study the stability of the circuit. For the analysis of the circuit performance, the linear time-dependent modeling approach is used. This method is based on determination of the circuit parameters at each step according to parameters of the previous steps, bias voltages, and the input signal. Results of the proposed method for analysis of non-Foster circuit are compared with those of nonlinear analysis using commercial software, which shows a good agreement together and the proposed method is validated. Based on the analysis, the nonlinear capacitance of non-Foster circuit is extracted and based on the simple second order model of current source of FET, the analytic model of negative capacitor is extracted and improved by curve fitting. The proposed model results have a good agreement with simulation results of NIC's circuit.

Type
Research Papers
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2016 

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References

REFERENCES

[1] Foster, R.M.: A reactance theorem. Bell Syst. Tech. J., 3 (1924), 259267.Google Scholar
[2] Linvill, J.G.: Transistor negative-impedance converters. Proc. IRE, 41 (1953), 725729.Google Scholar
[3] Sussman-Fort, S.E.; Rudish, R.M.: Non-Foster impedance matching of electrically-small antennas. IEEE Trans. Antennas Propag., 57 (2009), 22302241.Google Scholar
[4] Hrabar, S.; Krois, I.; Bonic, I.; Kiricenko, A.: Basic concepts of active dispersionless metamaterial based on non-Foster elements, in ICECom, 2010 Conf. Proc., Dubrovnik, 2010.Google Scholar
[5] Kolev, S.; Delacressonniere, B.; Gautier, J.L.: Using a negative capacitance to increase the tuning range of a varactor diode in MMIC technology. IEEE Trans. Microw. Theory Tech., 49 (2001), 24252430.Google Scholar
[6] Ghadiri, A.; Moez, K.: Gain-enhanced distributed amplifier using negative capacitance. IEEE Trans. Circuits Syst. I: Regular Papers, 57 (2010), 28342843.Google Scholar
[7] Stearns, S.D.: Non-Foster circuits and stability theory, in 2011 IEEE Int. Symp. on Antennas and Propagation (APSURSI), Spokane, WA, 2011.Google Scholar
[8] Ugarte-Munoz, E.; Hrabar, S.; Segovia-Vargas, D.; Kiricenko, A.: Stability of non-Foster reactive elements for use in active metamaterials and antennas. IEEE Trans. Antennas Propag., 60 (2012), 34903494.Google Scholar
[9] Stearns, S.D.: Circuit stability theory for non-Foster circuits, in 2013 IEEE MTT-S Int. Microw. Symp. Digest (IMS), Seattle, WA, 2013.CrossRefGoogle Scholar
[10] Stearns, S.D.: Incorrect stability criteria for non-Foster circuits, in 2012 IEEE Antennas and Propagation Society Int. Symp. (APSURSI), Chicago, IL, 2012.Google Scholar
[11] Rengarajan, S.R.; White, C.R.: Stability analysis of superluminal waveguides periodically loaded with non-Foster circuits. IEEE Antennas Wireless Propag. Lett., 12 (2013), 13031306.Google Scholar
[12] Curtice, W.R.: A MESFET model for use in the design of GaAs integrated circuits. IEEE Trans. Microw. Theory Tech., 28 (1980), 448456.Google Scholar
[13] Khoshniyat, H.; Moradi, G.; Abdipour, A.; Afrooz, K.: Optimization and fully-distributed analysis of single-pole single-throw traveling wave switches at millimeter wave frequency band. Int. J. Info. Commun. Technol. (IJICT), 3 (2011), 1925.Google Scholar