Skip to main content Accessibility help
×
Home
Hostname: page-component-cf9d5c678-xvx2z Total loading time: 0.189 Render date: 2021-07-31T11:33:30.105Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Overview of AlGaN/GaN HEMT technology for L- to Ku-band applications

Published online by Cambridge University Press:  23 March 2010

Stéphane Piotrowicz
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Erwan Morvan
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Raphaël Aubry
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Guillaume Callet
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Eric Chartier
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Christian Dua
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Jérémy Dufraisse
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Didier Floriot
Affiliation:
United Monolithic Semiconductors, Rd 128, 91401 Orsay, France.
Jean-Claude Jacquet
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Olivier Jardel
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Yves Mancuso
Affiliation:
THALES Systèmes Aéroportés, Avenue Gay-Lussac, Elancourt, France.
Benoit Mallet-Guy
Affiliation:
THALES Systèmes Aéroportés, Avenue Gay-Lussac, Elancourt, France.
Mourad Oualli
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Zineb Ouarch
Affiliation:
United Monolithic Semiconductors, Rd 128, 91401 Orsay, France.
Marie-Antoinette Di-Forte Poisson
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Nicolas Sarazin
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Michel Stanislawiak
Affiliation:
THALES Air Systems, ZI du Mont Jarret, 76520 Ymare, France.
Sylvain Delage
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Corresponding

Abstract

The present paper presents an overview of the AlGaN/GaN-based circuits realized over the years. Two technological processes with 0.25 and 0.7 μm gate length allowed one to address applications from L- to Ku-bands. Depending on the process development and frequency of the operation, results on hybrid or MMIC technology are presented. GaN technology is evaluated through the realization of high-power amplifiers, robust low-noise amplifiers, or power switches to prepare the next generation of Tx-Rx modules.

Type
Original Article
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1]Wu, Y.-F.; Kapolnek, D.; Ibbrtson, J.P.; Parikh, P.; Keller, B.P.; Mishra, U.K.: Very-high power density AlGaN/GaN HEMTs. IEEE Trans. Electron. Dev., 48 (3) (2001), 586590.Google Scholar
[2]Sheppard, S.T. et al. : High power microwave GaN/AlGaN HEMT's on SiC substrate. IEEE Electron. Dev. Lett., 20 (1999), 161163.CrossRefGoogle Scholar
[3]Piotrowicz, S. et al. : Ultra compact X-band GaInP/GaAs HBT MMIC amplifiers: 11 W, 42% of PAE on 13 mm2 and 8.7 W, 38% of PAE on 9 mm2, in IEEE MTT-S Digest, June 2006.Google Scholar
[4]Couturier, A.M. et al. : A robust 11 W high efficiency X-band GaInP HBT amplifier, in IEEE MTT-S Digest, June 2007.Google Scholar
[5]Kobayashi, K.W.; Chen, Y.C.; Smorchkova, I.; Tsai, R.; Wojtowicz, M.; Oki, A.: A 2 watt, sub-dB noise figure GaN MMIC LNA-PA amplifier with multi octave bandwidth from 0.2–8 GHz, in IEEE IMS 2007 Conf., 619622.Google Scholar
[6]Lee, Y.; Jeong, Y.: Applications of GaN HEMT's and SiC MESFETs in high efficiency class-E power amplifier design for WCDMA applications, in IEEE IMS 2007 Conf., 10991102.Google Scholar
[7]Lee, J.; Webb, K.J.: Broadband GaN HEMT push-pull microwave power amplifier. IEEE Microwave Wireless Components Lett., 11 (9) (2001), 367369.Google Scholar
[8]Mancuso, Y.; Gremillet, P.; Lacomme, P.: T/R-Modules technological and technical trends for phased array antennas, in IEEE IMS 2006 Conf., 614617.Google Scholar
[9]Sudow, M. et al. : An AlGaN/GaN HEMT-based microstrip MMIC process for advanced transceiver design. IEEE Trans. Microwave Theory Tech., 56 (8) (2008).5 18271833.CrossRefGoogle Scholar
[10]Piotrowicz, S. et al. : Broadband AlGaN/GaN high power amplifiers, robust LNAs, and power switches in L-band, in EuMW 2009 Conf., 17841787.Google Scholar
[11]Jardel, O. et al. : A new nonlinear HEMT model for AlGaN/GaN switch applications, in EuMW 2009 Conf., Rome, Italy, 7477.Google Scholar
[12]Jansen, J.; van Heijningen, M.; Provenzano, G.; Visser, G.C.; Morvan, E.; van Vliet, F.E.: X-band robust AlGaN/GaN receiver MMICs with over 41 dBm power handling, in CSIC 2008 Conf., Monterey, USA.Google Scholar
[13]Piotrowicz, S. et al. : State of the Art 58 W, 38% PAE X-Band AlGaN/GaN HEMTs microstrip MMIC amplifiers, in CSIC 2008 Conf., Monterey, USA.Google Scholar
[14]Schuh, P. et al. : 20 W GaN HPAs for next generation X-Band T/R-modules, in IMS 2006 Conf., San Francisco, USA.Google Scholar
[15]Costrini, C. et al. : A 20 Watt microstrip X Band AlGaN/GaN HPA MMIC for advanced radar applications, in EuMW Conf., Amsterdam, 2008.Google Scholar
[16]Kühn, J. et al. : Design of X-Band GaN MMICs using field plates, in EuMW Conf., Roma, 2009.Google Scholar
[17]Fanning, D.M. et al. : 25 W X-band GaN on Si MMIC, in GaAs MANTECH 2005 Conf. Proc., New Orleans, USA, April 2005.Google Scholar
[18]Klockenhoff, H.; Behtash, R.; Wurfl, J.; Heinrich, W.; Tranckle, G.: A compact 16 Watt X-band GaN-MMIC power amplifier, in IEEE MTT-S Digest, 2006, 18461849.Google Scholar
[19]Tayrani, R.: A spectrally pure 5.0 W, high PAE, (6–12 GHz) GaN monolithic class E power amplifier for advanced T/R modules, in RFIC Conf. 2007, 581584.Google Scholar
[20]Piotrowicz, S. et al. : Broadband hybrid flip-chip 6–18 GHz AlGaN/GaN HEMT amplifiers, in IEEE IMS 2008 Conf., 11311134.Google Scholar
1
Cited by

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Overview of AlGaN/GaN HEMT technology for L- to Ku-band applications
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Overview of AlGaN/GaN HEMT technology for L- to Ku-band applications
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Overview of AlGaN/GaN HEMT technology for L- to Ku-band applications
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *