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A new nonlinear HEMT model for AlGaN/GaN switch applications

Published online by Cambridge University Press:  07 July 2010

Guillaume Callet*
Affiliation:
XLIM-UMR CNRS 6172-Université de Limoges, 7, rue Jules Vallès, 19100 Brive-la-Gaillarde, France. Alcatel-Thales 3-5lab, Route de Nozay, 91640 Marcoussis, France.
Jad Faraj
Affiliation:
XLIM-UMR CNRS 6172-Université de Limoges, 7, rue Jules Vallès, 19100 Brive-la-Gaillarde, France.
Olivier Jardel
Affiliation:
Alcatel-Thales 3-5lab, Route de Nozay, 91640 Marcoussis, France.
Christophe Charbonniaud
Affiliation:
AMCAD Engineering, ESTER Technopole, 87069 Limoges, France.
Jean-Claude Jacquet
Affiliation:
Alcatel-Thales 3-5lab, Route de Nozay, 91640 Marcoussis, France.
Tibault Reveyrand
Affiliation:
XLIM-UMR CNRS 6172-Université de Limoges, 7, rue Jules Vallès, 19100 Brive-la-Gaillarde, France.
Erwan Morvan
Affiliation:
XLIM-UMR CNRS 6172-Université de Limoges, 7, rue Jules Vallès, 19100 Brive-la-Gaillarde, France.
Stéphane Piotrowicz
Affiliation:
Alcatel-Thales 3-5lab, Route de Nozay, 91640 Marcoussis, France.
Jean-Pierre Teyssier
Affiliation:
XLIM-UMR CNRS 6172-Université de Limoges, 7, rue Jules Vallès, 19100 Brive-la-Gaillarde, France.
R. Quéré
Affiliation:
Alcatel-Thales 3-5lab, Route de Nozay, 91640 Marcoussis, France.
*
Corresponding author: G. Callet Email: guillaume.callet@xlim.fr

Abstract

We present here a new set of equations for modeling the I–V characteristics of Field Effects Transistors (FETs), particularly optimized for AlGaN/GaN HEMTs. These equations describe the whole characteristics from negative to positive breakdown loci, and reproduce the current saturation at high level. Using this model enables to decrease the modeling process duration when a same transistor topology is used for several applications in a T/R module. It can even be used for switches design, which is the most demanding application in terms of I–V swing. Moreover, particular care was taken to accurately model the first third orders of the current derivatives, which is important for multione applications. We also focused on an accurate definition of the nonlinear elements such as capacitances for power applications. There are 18 parameters for the main current source (and six for both diodes Igs and Igd). This can be compared to Tajima's equations-based model (13 parameters) or to the Angelov model (14 parameters), which only fit the I–V characteristics for positive values of Vds. We will detail here the model formulation, and show some measurements/modeling comparisons on both I–V, [S]-parameters and temporal load-pull obtained for a 8 × 75 μm GaN HEMT, with 0.25 μm gate length.

Type
Original Article
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

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References

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