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InAlN/GaN HEMTs based L-band high-power packaged amplifiers

Published online by Cambridge University Press:  25 February 2014

Olivier Jardel*
Affiliation:
III–V Lab, route de Nozay, 91461 Marcoussis Cedex, France. Phone: +33 1 30 77 68 64
Jean-Claude Jacquet
Affiliation:
III–V Lab, route de Nozay, 91461 Marcoussis Cedex, France. Phone: +33 1 30 77 68 64
Lény Baczkowski
Affiliation:
III–V Lab, route de Nozay, 91461 Marcoussis Cedex, France. Phone: +33 1 30 77 68 64
Dominique Carisetti
Affiliation:
LATPI, Campus Polytechnique, 1 Avenue Augustin Fresnel, 91767 Palaiseau Cedex, France
Didier Lancereau
Affiliation:
III–V Lab, route de Nozay, 91461 Marcoussis Cedex, France. Phone: +33 1 30 77 68 64
Maxime Olivier
Affiliation:
Thales Air Systems S.A.S, ZI du Mont Jarret, 76520 Ymare, France
Raphaël Aubry
Affiliation:
III–V Lab, route de Nozay, 91461 Marcoussis Cedex, France. Phone: +33 1 30 77 68 64
Marie-Antoinette di Forte Poisson
Affiliation:
III–V Lab, route de Nozay, 91461 Marcoussis Cedex, France. Phone: +33 1 30 77 68 64
Christian Dua
Affiliation:
III–V Lab, route de Nozay, 91461 Marcoussis Cedex, France. Phone: +33 1 30 77 68 64
Stéphane Piotrowicz
Affiliation:
III–V Lab, route de Nozay, 91461 Marcoussis Cedex, France. Phone: +33 1 30 77 68 64
Sylvain L. Delage
Affiliation:
III–V Lab, route de Nozay, 91461 Marcoussis Cedex, France. Phone: +33 1 30 77 68 64
*
Corresponding author: O. Jardel Email: olivier.jardel@3-5lab.fr

Abstract

This paper presents power results of L-band packaged hybrid amplifiers using InAlN/GaN/SiC HEMT power dies. The high-power densities achieved both in pulsed and continuous wave (cw) modes confirm the interest of such technology for high-frequency, high-power, and high-temperature operation. We present here record RF power measurements for different versions of amplifiers. Up to 260 W, i.e. 3.6 W/mm, in pulsed (10 µs/10%) conditions, and 105 W, i.e. 2.9 W/mm, in cw conditions were achieved. Such results are made possible thanks to the impressive performances of InAlN/GaN transistors, even when operating at high temperatures. Unit cell transistors deliver output powers of 4.3 W/mm at Vds = 40 V in the cw mode of operation at the frequency of 2 GHz. The transistor process is described here, as well as the amplifiers design and measurements, with a particular focus to the thermal management aspects.

Type
Research Papers
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2014 

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References

REFERENCES

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