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Recombination Lasers in the XUV Spectral Region

Published online by Cambridge University Press:  12 April 2016

G.J. Pert*
Affiliation:
Department of Applied Physics, University of Hull Hull, HU6 7RX, U.K.

Extract

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In a conventional laser operating in the near ultra-violet, optical or infra-red spectral bands the photon energies, not exceeding lOeV, are closely matched to the electronic or molecular energy levels of neutral and weakly ionised atoms. Consequently typical photon energies (~ eV), and transition lifetimes (~ ns) closely match the characteristics of fast electrical circuitry feeding a weakly ionised discharge which may be used to pump either directly or indirectly the laser medium.

In a X-ray laser operating at about 10Å, photon energies are about 1 keV, and lifetimes about 10−14s (l0fs). In consequence the power required to pump the laser must be expected to increase rapidly as the wavelength decreases. The gain per unit length is given by:

where ζ is the line shape factor, A the spontaneous transition probability, λ the wavelength, and Δν the width of the line, and (n2,g2) and (n3,g3) the population density and statistical weight of the lower and upper laser states respectively. The total power loss per unit area, p, of the medium must exceed that emitted by spontaneous decay of the laser transition.

Type
Session 7. High Density Laboratory Plasmas
Copyright
Copyright © Naval Research Laboratory 1984. Publication courtesy of the Naval Research Laboratory, Washington, DC.

References

Haelbich, R.Pl, Segmuller, A. and Spiller, E. 1980, Appl. Phys. Lett. 34, 6.Google Scholar
Barbee, T.W. Jr. and Keith, D.L. 1979 in Lithography/Microscopy Beam-shine Workshop, ed. Dannemiller, C.R.. SSRL Report No. 79/02, 185.Google Scholar
Silfvast, W.T. and Wood, O.R. Jr. 1980, J. de Physique, 41, C 9, 439.Google Scholar
Pert, G.J., 1976, J. Phys. B, 9, 3301.CrossRefGoogle Scholar
Suckewer, S. and Fishman, H. 1980, J. Appl. Phys., 51, 1922.CrossRefGoogle Scholar
Elton, R.C., Seely, J.F. and Dixon, R.H., 1982, Paper presented at 1st Topical Meeting on Laser Techniques in the Extreme Ultraviolet, Boulder, USA.Google Scholar
Jamelot, G., Jaegle, P., Carillon, A., Bideau, A., Moller, C., Guennou, H. and Sureau, A., 1981, in Proc. Int. Conf. on Lasers '81, New Orleans, December 1981, ed. Collins, C.B. (S.T.S. Press, McLean Va.) 178.Google Scholar
Jacoby, D., Pert, G.J., Shorrock, L.D. and Tallents, G.J., 1982, J. Phys. B, 15, 3557.CrossRefGoogle Scholar
Pert, G.J., Shorrock, L.D., Tallents, G.J., Corbett, R., Lamb, M.J., Lewis, C.L.S., Mahoney, E., Eason, R.B., Hooker, C. and Key, M.H., 1984, Paper presented at IInd Topical Meeting on Laser Techniques in the Extreme Ultraviolet, Boulder, USA, and Central Laser Facility Annual Report, RAL 84.049, A4.2.Google Scholar
Dave, A.K. and Pert, G.J., J. Phys. B: in press.Google Scholar