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Reflected extended X-ray absorption fine structure study of the surface region of layered samples

Published online by Cambridge University Press:  14 January 2011

A. Muñoz-Páez*
Affiliation:
ICMS-Inorganic Chemistry Department, CSIC-University of Seville, Avda Americo Vespucio, 49, 41092 Seville, Spain
V. López-Flores
Affiliation:
ICMS-Inorganic Chemistry Department, CSIC-University of Seville, Avda Americo Vespucio, 49, 41092 Seville, Spain
S. Díaz-Moreno
Affiliation:
Diamond Light Source Ltd, Harwell Science and Innovation Campus, Didcot, Oxfordshire OX11 0DE, UK
D. T. Bowron
Affiliation:
ISIS Facility, Rutherford Appleton Laboratory, Chilton, Didcot OX11 0QX, UK
S. Ramos
Affiliation:
Diamond Light Source Ltd, Harwell Science and Innovation Campus, Didcot, Oxfordshire OX11 0DE, UK
S. Ansell
Affiliation:
ISIS Facility, Rutherford Appleton Laboratory, Chilton, Didcot OX11 0QX, UK
*
Email address for correspondence:adela@us.es
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Abstract

We present preliminary reflection extended X-ray absorption fine structure results on reactive magnetron sputtering molybdenum nitride (MoN) layered samples, with different compositions and surface layer thickness. The results obtained over a wide range of incidence angles show significant differences between two samples where the outer layer is either Mo metal or MoN.

Type
Poster paper
Copyright
Copyright © Diamond Light Source Ltd 2011

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References

REFERENCES

López-Flores, V., Ansell, S., Bowron, D. T., Díaz-Moreno, S., Ramos, S. & Muñoz-Páez, A. 2007 Optimized end station and operating protocols for reflection extended x-ray absorption fine structure (ReflEXAFS) investigations of surface structure at the European Synchrotron Radiation Facility beamline BM29. Rev. Sci. Instrum. 78, 013109.Google Scholar
López-Flores, V., Ansell, S., Ramos, S., Bowron, D. T., Díaz-Moreno, S. & Muñoz-Páez, A. 2009 Development of ReflEXAFS data analysis for deeper surface structure studies. J. Phys. Conf. Ser. 160, 012110.Google Scholar
Martens, G. & Rabe, P. 1980 EXAFS studies on superficial regions by means of total reflection. Phys. Status Solidi A 58, 415.Google Scholar