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Novel GIX2 Apparatus for Thin Film Analysis Using Color Laue Method

Published online by Cambridge University Press:  06 March 2019

Toshihisa Horiuchi
Affiliation:
Department of Electronics Science and Engineering, Faculty of Engineering, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto 606-01, JAPAN
Kenji Ishida
Affiliation:
Department of Electronics Science and Engineering, Faculty of Engineering, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto 606-01, JAPAN
Kouichi Hayashi
Affiliation:
Department of Electronics Science and Engineering, Faculty of Engineering, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto 606-01, JAPAN
Kazumi Matsushige
Affiliation:
Department of Electronics Science and Engineering, Faculty of Engineering, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto 606-01, JAPAN
Atsushi Shibata
Affiliation:
Department of Electronics Science and Engineering, Faculty of Engineering, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto 606-01, JAPAN
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Extract

In modern technology, thin-layered materials with layer thickness in nanometer ranges have been utilized for various advanced components such as integrated circuits, magnetic heads and disks, X-ray mirrors and coated window glasses. For the analysis of such materials, powerful probes, fluorescence(TXRF)1), diffraction(TXRD) 2-4) and reflectivity(GIXR) 5-7), formed by X-rays in conjunction with total reflection phenomena can provide important information on element composition, crystalline structure, layer thickness, electron density and interfacial roughness.

Type
Research Article
Copyright
Copyright © International Centre for Diffraction Data 1995

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