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Quantitative Analysis of Arsenic Element in a Trace of Water Using Total Reflection X-ray Fluorescence Spectrometry

Published online by Cambridge University Press:  06 March 2019

T. Ninomiya
Affiliation:
Forensic Science Laboratory, Hyogo Frefectural Police Headquarters, Hyogo, Japan
S. Nomura
Affiliation:
Osaka Electro-Communication University, Osaka, Japan
K. Taniguchi
Affiliation:
Osaka Electro-Communication University, Osaka, Japan
S. Ikeda
Affiliation:
Ryukoku University, Kyoto, Japan
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Extract

Various kinds of compounds containing arsenic have been used in the world as rat poisons, agricultural chemicals and so on. In the field of semiconductor materials, AsH3 is used as a doping gas on silieon-wafer substrates and GaAs is now also investigated as a wafer substrate instead of Si wafer.

As for quantitative analysis of arsenic, atomic absorption spectrometry (AAS) and inductively coupled plasma atomic-emission spectrometry (ICP-AES) have often been used. In these methods, usually, oomplioated pretreatments such as preconcentration and separation have been needed in order to obtain reproducible values for arsenic.

Type
V. XRF Applications
Copyright
Copyright © International Centre for Diffraction Data 1988

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References

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