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Near-Surface Analysis of Semicondutor Using Grazing Incidence X-Ray Fluorescence

Published online by Cambridge University Press:  06 March 2019

Atsuo Iida
Photon Factory, National Laboratory for High Energy Physics, Ohomachi, Tsukubagun, Ibarakiken 305, Japan
Kenji Sakurai
Department of Industrial Chemistry, University of Tokyo Bunkyoku, Tokyo 113, Japan
Yohichi Gohshi
Department of Industrial Chemistry, University of Tokyo Bunkyoku, Tokyo 113, Japan
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The X-ray external total reflection was used for the x-ray fluorescence analysis of the near surface layer of a GaAs wafer and a GaAlAs epilayer. Synchrotron radiation was used as an excitation source. The intensity ratio between the Ga K and As K fluorescence signals was measured as a function of the glancing angle. The reduction of As atoms near the surface of less than a hundred Å was observed for the high temperature annealed GaAlAs epilayer.

VIII. Synchrotron Radiation and Other Applications of XRF
Copyright © International Centre for Diffraction Data 1987

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