3 results
Degradation and SILC Effects of RPECVD sub-2.0nm Oxide/Nitride and Oxynitride Dielectrics Under Constant Current Stress
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- Journal:
- MRS Online Proceedings Library Archive / Volume 716 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, B2.9
- Print publication:
- 2002
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Independent Tunneling Reductions Relative to Homogeneous Oxide Dielectrics From i) Nitrided Interfaces, and ii) Physically-Thicker Stacked Oxide/Nitride and Oxide/Oxynitride Gate Dielectrics
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- Journal:
- MRS Online Proceedings Library Archive / Volume 592 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 317
- Print publication:
- 1999
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Aggressively Scaled P-Channel Mosfets With Stacked Nitride-Oxide-Nitride, N/O/N, Gate Dielectrics
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- Journal:
- MRS Online Proceedings Library Archive / Volume 567 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 101
- Print publication:
- 1999
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