12 results
Improvement of Mixing Conductance and Spin-Seebeck Effect at Fe Interface Treatment
-
- Journal:
- MRS Advances / Volume 1 / Issue 60 / 2016
- Published online by Cambridge University Press:
- 10 May 2016, pp. 3959-3964
- Print publication:
- 2016
-
- Article
- Export citation
Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AlGaN quantum well
-
- Journal:
- The European Physical Journal - Applied Physics / Volume 27 / Issue 1-3 / July 2004
- Published online by Cambridge University Press:
- 15 July 2004, pp. 271-273
- Print publication:
- July 2004
-
- Article
- Export citation
Conducting versus insulating walls in a heavy ion reaction chamber
-
- Journal:
- Laser and Particle Beams / Volume 21 / Issue 1 / January 2003
- Published online by Cambridge University Press:
- 22 July 2003, pp. 41-46
-
- Article
- Export citation
Organic Transistor Sensors and Memory Elements Fabricated Via Solution Deposition
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 736 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, D4.7
- Print publication:
- 2002
-
- Article
- Export citation
Organic Materials for Multifunctional Transistor-Based Devices
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 725 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, P6.7
- Print publication:
- 2002
-
- Article
- Export citation
Organic Transistor Sensors and Memory Elements Fabricated VIA Solution Deposition
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 761 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, D4.7
- Print publication:
- 2002
-
- Article
- Export citation
MOCVD growth of GaN on flat and misoriented A-plane sapphire substrates
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 680 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, E3.4
- Print publication:
- 2001
-
- Article
- Export citation
Fabrication and Investigation of the Metal-Ferroelectric-Semiconductor Structure with Pb(Zr0.53Ti0.47)O3 on AlxGa1-xN/GaN Heterostructures
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I11.41.1
- Print publication:
- 2001
-
- Article
- Export citation
Extraction of Polarization-Induced Charge Density in Modulation-Doped AlxGa1-xN/GaN Heterostructures Based on Schottky C-V Simulation
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I11.42.1
- Print publication:
- 2001
-
- Article
- Export citation
Effect of the Inter-Subband Scattering in Modulation-Doped AlxGa1-xN/GaN Heterostructures
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I6.34.1
- Print publication:
- 2001
-
- Article
- Export citation
The association between the high interpersonal sensitivity type of personality and a lifetime history of depression in a sample of employed Japanese adults
-
- Journal:
- Psychological Medicine / Volume 29 / Issue 5 / September 1999
- Published online by Cambridge University Press:
- 01 September 1999, pp. 1243-1248
-
- Article
- Export citation
Radiative Recombination between Two Dimensional Electron Gas and Photoexcited Holes in Modulation-doped AlxGa1−xN/GaN Heterostructures
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.53
- Print publication:
- 1999
-
- Article
- Export citation