To send content items to your account,
please confirm that you agree to abide by our usage policies.
If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account.
Find out more about sending content to .
To send content items to your Kindle, first ensure firstname.lastname@example.org
is added to your Approved Personal Document E-mail List under your Personal Document Settings
on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part
of your Kindle email address below.
Find out more about sending to your Kindle.
Note you can select to send to either the @free.kindle.com or @kindle.com variations.
‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi.
‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.
The spring of 2009 witnessed the emergence of a novel influenza A(H1N1) virus resulting in the first influenza pandemic since 1968. In autumn of 2010, the 2009 novel H1N1 influenza strain re-emerged. We performed a retrospective time-series analysis of all patients with laboratory-confirmed H1N1 influenza who presented to our institution during 2009. Cases of influenza were assembled into 3-day aggregates and forecasting models of H1N1 influenza incidence were created. Forecasting estimates of H1N1 incidence for the 2010–2011 season were compared to actual values for our institution to assess model performance. Ninety-five percent confidence intervals calculated around our model's forecasts were accurate to ±3·6 cases per 3-day period for our institution. Our results suggest that time-series models may be useful tools in forecasting the incidence of H1N1 influenza, helping institutions to optimize distribution of resources based on the changing burden of illness.
We report on the investigation of X-ray strains and surface elevation of ion-implanted GaN as a function of ion fluence. Si, Mg and Ar ion implantation are examined. A continuous increase in lattice constants, a and c occur for doses up to near 1 × 1015/cm2. At higher doses there emerges a volume expansion of the GaN perpendicular to the surface which is an order of magnitude larger than any observed out-of-plane change in strain. The rapid expansion correlates with the onset of GaN amorphization. Transmission electron microscopy indicates that cavities form after 5 × 1016/cm2, 100 keV Ar+ implantation. For low temperature implantation, the cavities lie near the peak of the ion range For room temperature implantation, the cavities coalesce at the surface and push out the GaN perpendicular to the surface. AFM measurements confirm the presence of large bumps on the surface. The very high dose ion implantation have important consequences to etching rates of GaN and to the ability to produce n+, but not p+ doping with ion implantation.