14 results
Reliability of High-Temperature Operation for GaN-Based OPAMP
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1195 / 2009
- Published online by Cambridge University Press:
- 31 January 2011, 1195-B08-02
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- 2009
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High Current Gain Triple Ion Implanted 4H-SiC BJT
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1195 / 2009
- Published online by Cambridge University Press:
- 31 January 2011, 1195-B08-03
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- 2009
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Effect of Base Impurity Concentration on DC Characteristics of Double Ion Implanted 4H-SiC BJTs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1069 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1069-D07-20
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- 2008
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Integrated GaN/AlGaN/GaN HEMTs with Preciously Controlled Resistance on Silicon Substrate Fabricated by Ion Implantation
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- MRS Online Proceedings Library Archive / Volume 1068 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1068-C03-06
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- 2008
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Investigation of Electrical Properties in Si Ion Implanted GaN Layer as A Function of Dose and Energy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 955 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0955-I15-31
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- 2006
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Impact of EBAS annealing on sheet resistance reduction for Al-implanted 4H-SiC(0001)
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- Journal:
- MRS Online Proceedings Library Archive / Volume 911 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0911-B11-02
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- 2006
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Ion-Implanted GaN/AlGaN/GaN HEMTs with Extremely Low Gate Leakage Current
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- Journal:
- MRS Online Proceedings Library Archive / Volume 955 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0955-I15-22
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- 2006
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Double-Ion-Implanted GaN MESFETs with Extremely Low Source/Drain Resistance
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- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF13-06
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- 2005
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Fabrication and electrical characteristics of Ti/Al ohmic contact to Si+ implanted GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF14-03
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- 2005
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Effect of Electron Incidence in Epitaxial Growth of CeO2(110) Layers on Si(100) Substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 474 / 1997
- Published online by Cambridge University Press:
- 15 February 2011, 321
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- 1997
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Low Temperature Epitaxial Growth of CeO2(110) Layers on Si(100) Using Bias Evaporation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 441 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 535
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- 1996
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Study on Epitaxial Growth of CeO2 (110)/Si(100) in Conjunction with Substrate Off-Orientation
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- MRS Online Proceedings Library Archive / Volume 341 / 1994
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- 15 February 2011, 101
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- 1994
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Morphological Evolution with Layer Thickness in single crystal CeO2(110)/Si(100)
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- MRS Online Proceedings Library Archive / Volume 367 / 1994
- Published online by Cambridge University Press:
- 03 September 2012, 323
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- 1994
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Crystallographic Analysis of (110)CeO2/(100)Si Using RBS/Channeling Technique
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- Journal:
- MRS Online Proceedings Library Archive / Volume 312 / 1993
- Published online by Cambridge University Press:
- 15 February 2011, 309
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- 1993
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