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Morphological Evolution with Layer Thickness in single crystal CeO2(110)/Si(100)

  • Tomoyasu Inoue (a1), Yasuhiro Yamamoto (a2), Masataka Satoh (a3) and Tetsu Ohsuna (a1)

Abstract

Surface morphology evolution of epitaxially grown CeO2(110) layers on Si(100) substrates is studied using atomic force microscopy (AFM) and reflection high energy electron diffraction (RHEED). The surface has a faceted structure; a stripe-appearance and triangular-shape in plan- and cross-sectional views, respectively. AFM measurements clarify that as the layer thickness increases, the cross-sectional shape changes from a gable roof shape toward trapezoidal, which is consistent with RHEED analyses. The width of the facet monotonically increases with the layer thickness, while its height saturates at ∼5 nm above 600 nm in thickness, which means that the surface approaches smooth morphology. Ion channeling analyses indicate that the thicker the layer, the better the crystalline quality at the surface.

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Morphological Evolution with Layer Thickness in single crystal CeO2(110)/Si(100)

  • Tomoyasu Inoue (a1), Yasuhiro Yamamoto (a2), Masataka Satoh (a3) and Tetsu Ohsuna (a1)

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