We have demonstrated a new method of doping suicide films which uses a pulsed excimer laser and a wafer cell which is filled with dopant gas species, e.g. BF3, ASF5, PF5. A spatially homogenized 308nm XeCl pulsed laser is used as a heating source to drive adsorbed dopant gas species into the suicide, as well as to outdiffuse dopants into the silicon substrate. The total dose, interface concentration, and junction depth, are controlled by varying the number of laser pulses. High interface concentrations (Cint >1020 atoms/cm3) and shallow junctions (Xj < 1500Å) are obtained using this technique. Laser irradiation also results in smoothing of the suicide film.