Skip to main content Accessibility help
×
Home

Shallow Junction Formation in Silicon: Dopant Incorporation and Diffusion Through Tungsten Silicide Films Using Gas Immersion Laser Doping (Gild)

  • Emi Ishida (a1), K. -Josef Kramer (a1), Somit Talwar (a1), Thomas W. Sigmon (a1), Kurt H. Weiner (a2) and William T. Lynch (a3)...

Abstract

We have demonstrated a new method of doping suicide films which uses a pulsed excimer laser and a wafer cell which is filled with dopant gas species, e.g. BF3, ASF5, PF5. A spatially homogenized 308nm XeCl pulsed laser is used as a heating source to drive adsorbed dopant gas species into the suicide, as well as to outdiffuse dopants into the silicon substrate. The total dose, interface concentration, and junction depth, are controlled by varying the number of laser pulses. High interface concentrations (Cint >1020 atoms/cm3) and shallow junctions (Xj < 1500Å) are obtained using this technique. Laser irradiation also results in smoothing of the suicide film.

Copyright

References

Hide All
1. Probst, V., Schaber, H., Mitwalsky, A., Kabza, H., Van den hove, L., Maex, K., “WSi2 and CoSi2 as diffusion sources for shallow-junction formation in silicon”, Journal of Applied Physics, 70(2), 1991.
2. Liu, R., Williams, D. S., Lynch, W. T., “Mechanisms for Process-induced Leakage in Shallow Suicided Junctions,” IEDM Technical Digest, 1986(58), 1986.
3. Chu, C. L., Saraswat, K. C., Wong, S. S., “Characterization of Lateral Dopant Diffusion in Suicides”, IEDM Technical Digest, 1990(245), 1990.
4. Carey, P. G., Weiner, K. H., Sigmon, T. W., “A Shallow Junction Submicron PMOS Process without High Temperature Anneals”, IEEE Electron Device Letters, 9, no. 10, 542, Oct. 1988.
5. Weiner, K. H., Sigmon, T. W., “Thin-base Bipolar Transistor Fabrication using Gas Immersion Laser Doping”, IEEE Electron Device Letters, 10, no. 6, 260, June 1989.
6. Kramer, K. -J, Talwar, S., Sigmon, T. W., Weiner, K. H., “Study of Interdiffusion, Crystallinity, Strain, and Thermal Stability of Si1-xGex/Si Created using Pulsed Laser Induced Epitaxy (PLIE)”, Proceedings of 1992 Spring Meeting Materials Research Society, Symposium F: Mechanisms of Heteroepitaxial Growth, in press.
7. Kramer, K. -J, Ishida, E., Talwar, S., Sigmon, T. W., Weiner, K. H., Carey, P. C., McCarthy, A. M., “Dopant Distribution and Electrical Characteristics of Boron-Doped Si1-xGex/Si P+/N Heterojunction Diodes Produced by Gas Immersion Laser Doping (GILD)/ Pulsed Laser Induced Epitaxy (PLIE)”, Proceedings of 1992 Spring Meeting Materials Research Society, Symposium F: Mechanisms of Heteroepitaxial Growth, in press.

Shallow Junction Formation in Silicon: Dopant Incorporation and Diffusion Through Tungsten Silicide Films Using Gas Immersion Laser Doping (Gild)

  • Emi Ishida (a1), K. -Josef Kramer (a1), Somit Talwar (a1), Thomas W. Sigmon (a1), Kurt H. Weiner (a2) and William T. Lynch (a3)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed