Organometallic aluminum azides have been found to be effective precursors for the low temperature chemical vapor deposition of thin films of aluminum nitride. Quantitative analysis of the gas phase products of the reaction are used to develop an understanding of the reaction. Rate studies of the deposition were performed in the temperature range from 400 to 800°C. Below 525°C, an activation barrier of 26.4 kcal/mol was found, while above 525°C, a value of 5.23 kcal/mol was obtained. The effects of the presence of N-C bonds and the type of Al-N interaction within the precursor are evaluated.