4 results
Energy Level Alignment at Bebq2/PEI/ITO Interfaces Studied by UV Photoemission Spectroscopy
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- Journal:
- MRS Advances / Volume 2 / Issue 42 / 2017
- Published online by Cambridge University Press:
- 31 January 2017, pp. 2261-2266
- Print publication:
- 2017
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Structural Analysis of GaN and GaN/InGaN/GaN DH Structures on Sapphire (0001) Substrate Grown by MOCVD
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 441
- Print publication:
- 1996
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Growth of GaN by Sublimation Technique and Homoepitaxial Growth by MOCVD
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 15
- Print publication:
- 1996
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Acceptor Binding Energy And Band Lineup Of III-V Nitride Alloys And Mocvd Growth Of GaN On GaAs - Or GaP-Coated Si
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- Journal:
- MRS Online Proceedings Library Archive / Volume 339 / 1994
- Published online by Cambridge University Press:
- 21 February 2011, 459
- Print publication:
- 1994
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