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Structural Analysis of GaN and GaN/InGaN/GaN DH Structures on Sapphire (0001) Substrate Grown by MOCVD

Published online by Cambridge University Press:  10 February 2011

Hisao Sato ,
Yoshiki Naoi  and
Shiro Sakai
Hisao Sato
Affiliation:
Department of Electrical and Electronic Engineering, The University of Tokushima 2-1 Minami-josanjima, Tokushima 770, Japan
Yoshiki Naoi
Affiliation:
Department of Electrical and Electronic Engineering, The University of Tokushima 2-1 Minami-josanjima, Tokushima 770, Japan
Shiro Sakai
Affiliation:
Department of Electrical and Electronic Engineering, The University of Tokushima 2-1 Minami-josanjima, Tokushima 770, Japan
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Abstract

We have investigated lattice structures of GaN and InGaN/GaN single-heterostructures (SH) and double-heterostructures (DH) by the reciprocal space mapping using X-ray diffraction technique from (0002) plane. For a single GaN layers, the transition of the film structure from grains with relatively independent orientation at about 0.3 μm followed by the coalescence at about 1 μm, to a uniform film with mosaic structure at 1.4 μm was clearly observed. For DH structure, ω-mode FWHMs both from InGaN (In composition approximately 7 %) and capping-GaN layers increased with increasing film thickness from 20 nm to 110 nm indicating the increased mosaic structure in the thick InGaN. We also observed the dislocation related to this increasing mosaic structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 441
Copyright
Copyright © Materials Research Society 1997

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References

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