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This paper introduces a new method to determine the crystalline fraction in samples containing amorphous phases from experimental X-ray diffraction data. Computer generated codes, one for each measured data point, are used to interpret the pattern as to where diffraction peaks exist and what is the angular breadth of each peak's intensity above background. Two parameters are defined that are used to identify the position and intensity of the crystalline phase diffraction peaks. For mold fluxes used in continuous casting, the crystalline fraction of solid slag film is a key factor that can affect heat transfer between solidified shell and mold. In this work, a new method was developed to determine the crystallinity of solid slag films. This method does not require structure parameters or other references, and results can be obtained directly by reading a text file with diffraction data. Results indicate that, there is a positive correlation between crystalline fraction and integrated intensities corresponding to crystalline phases. The selection of integration interval does not have much effect on results. To simplify computations, 20–45°2θ was considered as an appropriate interval.
The influence of the density of gap states and the band gap width of the intrinsic a-Si:H active layer on the characteristics of a-Si PIN/OLED coupling pair was analyzed by a-Si:H PIN/OLED CAD simulation model. The CAD simulation model was carried out based on a-Si PIN Hack & Shur model and OLED TCL transport model. At the same band gap width, for the intrinsic a-Si:H active layer with the higher density of gap states, the reverse current of a-Si PIN trended to be saturated at the higher reverse bias voltage. As a result, I-V curve of a-Si PIN/OLED around the turn point Vt became smoother with the increase of the density of gap states. At the same state density, the light induced current of a-Si PIN increased against the band gap width, assuming the input light had the same spectrum as AM1.5 solar light. Thus the luminance emitted from OLED increased with the decrease of the band gap width because OLED belongs to the light-emitting device controlled by current. The simulation results also showed that the influence of the state density intensified with the increase of the band gap of a-Si:H.
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