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An antifuse structure was analyzed using scanning electron microscope imaging and focused ion beam image slicing to generate a form of three-dimensional microscopy. This method reveals nanometer scale features that could not be easily imaged using a single focused ion beam cross-section. A novel end-point detection technique has been developed to control the thickness of the slice to about 2 nm. Voxel imaging and interpretive three-dimensional reconstruction was used to resolve volumes as small as 2 cubic nm3. It was determined that the fusing region for an antifuse is a complex mixture of material phases with an elliptical volume approximately 75 nm in diameter.
InAsSb quantum dot (QD) lasers are promising light sources with emission wavelengths beyond 2μm as recently demonstrated. We report the first detailed atomic force microscope (AFM) characterization of uncapped InAsSb quantum dots self-assembled on GaAs/In0.53Ga0.47As layers. These quantum dot structures are grown on (100) InP substrates by metal organic chemical vapor deposition (MOCVD). Growth conditions are chosen to maximize photoluminescence intensity and to obtain high output powers from Fabry-Perot lasers with one stack of InAsSb QDs. Conductive AFM is employed to simultaneously study topography, current image, and current-voltage (I-V) characteristics from various InAs1-ySby QDs with y varied between 0 and 0.25. Typical dot density is 4–5×1010/cm2 and dots are estimated to have a lateral dimension at the base of ∼40nm and a height of 2–5nm. I-V characteristics measured from individual InAsSb QDs are compared to those from InAs QDs. Also reported are electronic properties including energy band gaps of InAs and InAsSb QDs.
AlGaN/GaN HEMTs (High Electron Mobility Transistors) grown on semi-insulating (SI) SiC substrates are very promising for high power, high speed, and high temperature operation with great potential for both military and commercial applications. These high performance characteristics are possible due to presence of high two-dimensional electron gas (2 DEG) charge sheet density maintaining a high Hall mobility at the AlGaN barrier/GaN buffer hetero-interface. However, reliability of AlGaN HEMTs still remains a major concern because of the large number of defects and traps present both in the bulk as well as at the surface leading to current collapse. We report on the study of defects and surface properties in MOCVD-grown Al0.27Ga0.73N HEMT structures on SI SiC substrates. Our HEMT structures consist of a 25nm thick undoped AlGaN barrier layer and a 3μm thick undoped GaN buffer layer grown on a 100nm thick AlN nucleation layer. Hall measurements showed a charge sheet density of ∼1013/cm2 and a Hall mobility of ∼1500cm2/V·sec. Both cross-sectional and plan view TEMs were employed to study defects in the heterostructures and XPS (X-ray Photoelectron Spectroscopy) and AES (Auger Electron Spectroscopy) employed to study surface properties in both GaN and AlGaN layers. DC characterization results from AlGaN Schottky diodes with Pt/Au Schottky contacts are also reported along with results from AlGaN/GaN HEMT devices.
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